Boxcar averaging based scanning nonlinear dielectric microscopy and its application to carrier distribution Imaging on 2D Semiconductors

Kohei Yamasue, Yasuo Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Intermittent contact scanning nonlinear dielectric microscopy (IC-SNDM) has recently been applied to the nanoscale carrier or active dopant distribution imaging on two-dimensional semiconductors. However, IC-SNDM may suffer from a lower signal-To-noise (S/N) ratio than conventional contact mode SNDM due to the unoptimized detection of the signal only intermittently occurring. Here we show that S/N ratio can be much improved by applying the idea of boxcar averaging, which makes anomalous carrier doping on atomically-Thin MoS2 clearly visible by IC-SNDM.

Original languageEnglish
Title of host publication2019 IEEE International Integrated Reliability Workshop, IIRW 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728122038
DOIs
Publication statusPublished - 2019 Oct
Event2019 IEEE International Integrated Reliability Workshop, IIRW 2019 - Fallen Leaf Lake, United States
Duration: 2019 Oct 132019 Oct 17

Publication series

NameIEEE International Integrated Reliability Workshop Final Report
Volume2019-October

Conference

Conference2019 IEEE International Integrated Reliability Workshop, IIRW 2019
CountryUnited States
CityFallen Leaf Lake
Period19/10/1319/10/17

Keywords

  • MoS
  • Scanning nonlinear dielectric microscopy (SNDM)
  • Two-dimensional semiconductors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Boxcar averaging based scanning nonlinear dielectric microscopy and its application to carrier distribution Imaging on 2D Semiconductors'. Together they form a unique fingerprint.

Cite this