We fabricate high-performance pentacene thin-film transistors (TFTs) using lithographic processes compatible with industry standard amorphous silicon (a-Si) TFT fabrication. Bottom-contact bottom-gate pentacene TFTs realized with silicon nitride SiNx gate dielectric show effective mobility values of 0.59 cm2Vs, contact resistances as low as 2.4 kΩ cm, and low threshold voltages. These results demonstrate the viability of using SiNx as a gate dielectric for vacuum-deposited organic TFTs for large-area and flexible electronic applications.
- Contact resistance
- organic thin film transistors
- silicon nitride
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering