Bottom-contact pentacene thin-film transistors on silicon nitride

James Stott, Akichika Kumatani, Takeo Minari, Kazuhito Tsukagoshi, Sandrine Heutz, Gabriel Aeppli, Arokia Nathan

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We fabricate high-performance pentacene thin-film transistors (TFTs) using lithographic processes compatible with industry standard amorphous silicon (a-Si) TFT fabrication. Bottom-contact bottom-gate pentacene TFTs realized with silicon nitride SiNx gate dielectric show effective mobility values of 0.59 cm2Vs, contact resistances as low as 2.4 kΩ cm, and low threshold voltages. These results demonstrate the viability of using SiNx as a gate dielectric for vacuum-deposited organic TFTs for large-area and flexible electronic applications.

Original languageEnglish
Article number5961606
Pages (from-to)1305-1307
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number9
DOIs
Publication statusPublished - 2011 Sep

Keywords

  • Contact resistance
  • organic thin film transistors
  • pentacene
  • silicon nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Bottom-contact pentacene thin-film transistors on silicon nitride'. Together they form a unique fingerprint.

  • Cite this