Boron removal by dissolution and recrystallization of silicon in a sodium-silicon solution

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Abstract

Low-purity Si powder was dissolved in Na solvent, and Si recrystallized by the evaporation of Na from the Na-Si solution at 1173 K in a magnesium oxide crucible. Several impurity elements precipitated as compounds at the bottom of the crucible. Glow-discharge mass spectrometry showed a decrease in the concentration of most impurity elements, except Na and Mg, in the crystallized Si. The boron (B) concentration was reduced from 9.1 to 0.3 mass ppm by recrystallization. In addition, solidification segregation was confirmed by the depth profile of the B concentration from the crystal surface.

Original languageEnglish
Pages (from-to)723-726
Number of pages4
JournalSeparation and Purification Technology
Volume118
DOIs
Publication statusPublished - 2013 Sep 18

Keywords

  • Boron
  • Purification
  • Silicon
  • Sodium

ASJC Scopus subject areas

  • Analytical Chemistry
  • Filtration and Separation

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