Boron Doping Effect on Silicon Film Deposition in the Si2H6-B2H6-He Gas System

Satoshi Nakayama, Izumi Kawashima, Junichi Murota

Research output: Contribution to journalArticlepeer-review

47 Citations (Scopus)

Abstract

Heavily boron-doped silicon films are deposited in the temperature range 520°-665°C in the Si2H6-B2H6-He gas system. The effects of boron doping on the deposition rate and properties of silicon films are investigated and compared with those of phosphorus doping. The deposition rate increases with the addition of B2H6, and tne deposition rate increment is proportional to 2/3 power of the boron concentration in silicon film and to the partial pressure of Si2H6. Boron is deposited independently without the influence of silicon deposition. The amorphous-crystalline transition temperature is decreased with incorporating boron in silicon film except for the higher boron concentration than 2 x 1026 cm-3. For the higher boron concentration, crystallization is suppressed by incorporating boron.

Original languageEnglish
Pages (from-to)1721-1724
Number of pages4
JournalJournal of the Electrochemical Society
Volume133
Issue number8
DOIs
Publication statusPublished - 1986 Aug

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Boron Doping Effect on Silicon Film Deposition in the Si<sub>2</sub>H<sub>6</sub>-B<sub>2</sub>H<sub>6</sub>-He Gas System'. Together they form a unique fingerprint.

Cite this