Abstract
Heavily boron-doped silicon films are deposited in the temperature range 520°-665°C in the Si2H6-B2H6-He gas system. The effects of boron doping on the deposition rate and properties of silicon films are investigated and compared with those of phosphorus doping. The deposition rate increases with the addition of B2H6, and tne deposition rate increment is proportional to 2/3 power of the boron concentration in silicon film and to the partial pressure of Si2H6. Boron is deposited independently without the influence of silicon deposition. The amorphous-crystalline transition temperature is decreased with incorporating boron in silicon film except for the higher boron concentration than 2 x 1026 cm-3. For the higher boron concentration, crystallization is suppressed by incorporating boron.
| Original language | English |
|---|---|
| Pages (from-to) | 1721-1724 |
| Number of pages | 4 |
| Journal | Journal of the Electrochemical Society |
| Volume | 133 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1986 Aug |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
