Boron Doping Effect on Silicon Film Deposition in the Si2H6-B2H6-He Gas System

Satoshi Nakayama; Izumi Kawashima; Junichi Murota

doi:10.1149/1.2109002

Boron Doping Effect on Silicon Film Deposition in the Si₂H₆-B₂H₆-He Gas System

Satoshi Nakayama, Izumi Kawashima, Junichi Murota

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

Heavily boron-doped silicon films are deposited in the temperature range 520°-665°C in the Si₂H₆-B₂H₆-He gas system. The effects of boron doping on the deposition rate and properties of silicon films are investigated and compared with those of phosphorus doping. The deposition rate increases with the addition of B₂H₆, and tne deposition rate increment is proportional to 2/3 power of the boron concentration in silicon film and to the partial pressure of Si₂H₆. Boron is deposited independently without the influence of silicon deposition. The amorphous-crystalline transition temperature is decreased with incorporating boron in silicon film except for the higher boron concentration than 2 x 10²⁶ cm^-3. For the higher boron concentration, crystallization is suppressed by incorporating boron.

Original language	English
Pages (from-to)	1721-1724
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	133
Issue number	8
DOIs	https://doi.org/10.1149/1.2109002
Publication status	Published - 1986 Aug

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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abstract = "Heavily boron-doped silicon films are deposited in the temperature range 520°-665°C in the Si2H6-B2H6-He gas system. The effects of boron doping on the deposition rate and properties of silicon films are investigated and compared with those of phosphorus doping. The deposition rate increases with the addition of B2H6, and tne deposition rate increment is proportional to 2/3 power of the boron concentration in silicon film and to the partial pressure of Si2H6. Boron is deposited independently without the influence of silicon deposition. The amorphous-crystalline transition temperature is decreased with incorporating boron in silicon film except for the higher boron concentration than 2 x 1026 cm-3. For the higher boron concentration, crystallization is suppressed by incorporating boron.",

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AU - Nakayama, Satoshi

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AU - Murota, Junichi

PY - 1986/8

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N2 - Heavily boron-doped silicon films are deposited in the temperature range 520°-665°C in the Si2H6-B2H6-He gas system. The effects of boron doping on the deposition rate and properties of silicon films are investigated and compared with those of phosphorus doping. The deposition rate increases with the addition of B2H6, and tne deposition rate increment is proportional to 2/3 power of the boron concentration in silicon film and to the partial pressure of Si2H6. Boron is deposited independently without the influence of silicon deposition. The amorphous-crystalline transition temperature is decreased with incorporating boron in silicon film except for the higher boron concentration than 2 x 1026 cm-3. For the higher boron concentration, crystallization is suppressed by incorporating boron.

AB - Heavily boron-doped silicon films are deposited in the temperature range 520°-665°C in the Si2H6-B2H6-He gas system. The effects of boron doping on the deposition rate and properties of silicon films are investigated and compared with those of phosphorus doping. The deposition rate increases with the addition of B2H6, and tne deposition rate increment is proportional to 2/3 power of the boron concentration in silicon film and to the partial pressure of Si2H6. Boron is deposited independently without the influence of silicon deposition. The amorphous-crystalline transition temperature is decreased with incorporating boron in silicon film except for the higher boron concentration than 2 x 1026 cm-3. For the higher boron concentration, crystallization is suppressed by incorporating boron.

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