Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuation

Huabin Sun; Qijing Wang; Yun Li; Yen Fu Lin; Yu Wang; Yao Yin; Yong Xu; Chuan Liu; Kazuhito Tsukagoshi; Lijia Pan; Xizhang Wang; Zheng Hu; Yi Shi

doi:10.1038/srep07227

Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuation

Huabin Sun, Qijing Wang, Yun Li, Yen Fu Lin, Yu Wang, Yao Yin, Yong Xu, Chuan Liu, Kazuhito Tsukagoshi, Lijia Pan, Xizhang Wang, Zheng Hu, Yi Shi

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

Ferroelectric organic field-effect transistors (Fe-OFETs) have been attractive for a variety of non-volatile memory device applications. One of the critical issues of Fe-OFETs is the improvement of carrier mobility in semiconducting channels. In this article, we propose a novel interfacial buffering method that inserts an ultrathin poly(methyl methacrylate) (PMMA) between ferroelectric polymer and organic semiconductor layers. A high field-effect mobility (μ_FET) up to 4.6 cm2 V^-1 s^-1 is obtained. Subsequently, the programming process in our Fe-OFETs is mainly dominated by the switching between two ferroelectric polarizations rather than by the mobility-determined charge accumulation at the channel. Thus, the "reading" and "programming" speeds are significantly improved. Investigations show that the polarization fluctuation at semiconductor/insulator interfaces, which affect the charge transport in conducting channels, can be suppressed effectively using our method.

Original language	English
Article number	7227
Journal	Scientific reports
Volume	4
DOIs	https://doi.org/10.1038/srep07227
Publication status	Published - 2014 Nov 27
Externally published	Yes

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title = "Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuation",

abstract = "Ferroelectric organic field-effect transistors (Fe-OFETs) have been attractive for a variety of non-volatile memory device applications. One of the critical issues of Fe-OFETs is the improvement of carrier mobility in semiconducting channels. In this article, we propose a novel interfacial buffering method that inserts an ultrathin poly(methyl methacrylate) (PMMA) between ferroelectric polymer and organic semiconductor layers. A high field-effect mobility (μFET) up to 4.6 cm2 V-1 s-1 is obtained. Subsequently, the programming process in our Fe-OFETs is mainly dominated by the switching between two ferroelectric polarizations rather than by the mobility-determined charge accumulation at the channel. Thus, the {"}reading{"} and {"}programming{"} speeds are significantly improved. Investigations show that the polarization fluctuation at semiconductor/insulator interfaces, which affect the charge transport in conducting channels, can be suppressed effectively using our method.",

author = "Huabin Sun and Qijing Wang and Yun Li and Lin, {Yen Fu} and Yu Wang and Yao Yin and Yong Xu and Chuan Liu and Kazuhito Tsukagoshi and Lijia Pan and Xizhang Wang and Zheng Hu and Yi Shi",

note = "Funding Information: We would like to express our appreciation to Prof. Suidong Wang and Prof. Junzhuan Wang for fruitful discussions. Also, we thank Dr. Koichi Ikeda from Nippon Kayaku for providing C8-BTBT. This study is supported partially by 973 projects under grant nos. 2013CBA01600 and 2013CB932900, NSFC under grant nos. 61306021, 61204050 and 61229401, NSFJS under grant nos. BK20130579, BK2011435, KB2011011 and BK20130055.",

year = "2014",

month = nov,

day = "27",

doi = "10.1038/srep07227",

language = "English",

volume = "4",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Publishing Group",

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TY - JOUR

T1 - Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuation

AU - Sun, Huabin

AU - Wang, Qijing

AU - Li, Yun

AU - Lin, Yen Fu

AU - Wang, Yu

AU - Yin, Yao

AU - Xu, Yong

AU - Liu, Chuan

AU - Tsukagoshi, Kazuhito

AU - Pan, Lijia

AU - Wang, Xizhang

AU - Hu, Zheng

AU - Shi, Yi

N1 - Funding Information: We would like to express our appreciation to Prof. Suidong Wang and Prof. Junzhuan Wang for fruitful discussions. Also, we thank Dr. Koichi Ikeda from Nippon Kayaku for providing C8-BTBT. This study is supported partially by 973 projects under grant nos. 2013CBA01600 and 2013CB932900, NSFC under grant nos. 61306021, 61204050 and 61229401, NSFJS under grant nos. BK20130579, BK2011435, KB2011011 and BK20130055.

PY - 2014/11/27

Y1 - 2014/11/27

N2 - Ferroelectric organic field-effect transistors (Fe-OFETs) have been attractive for a variety of non-volatile memory device applications. One of the critical issues of Fe-OFETs is the improvement of carrier mobility in semiconducting channels. In this article, we propose a novel interfacial buffering method that inserts an ultrathin poly(methyl methacrylate) (PMMA) between ferroelectric polymer and organic semiconductor layers. A high field-effect mobility (μFET) up to 4.6 cm2 V-1 s-1 is obtained. Subsequently, the programming process in our Fe-OFETs is mainly dominated by the switching between two ferroelectric polarizations rather than by the mobility-determined charge accumulation at the channel. Thus, the "reading" and "programming" speeds are significantly improved. Investigations show that the polarization fluctuation at semiconductor/insulator interfaces, which affect the charge transport in conducting channels, can be suppressed effectively using our method.

AB - Ferroelectric organic field-effect transistors (Fe-OFETs) have been attractive for a variety of non-volatile memory device applications. One of the critical issues of Fe-OFETs is the improvement of carrier mobility in semiconducting channels. In this article, we propose a novel interfacial buffering method that inserts an ultrathin poly(methyl methacrylate) (PMMA) between ferroelectric polymer and organic semiconductor layers. A high field-effect mobility (μFET) up to 4.6 cm2 V-1 s-1 is obtained. Subsequently, the programming process in our Fe-OFETs is mainly dominated by the switching between two ferroelectric polarizations rather than by the mobility-determined charge accumulation at the channel. Thus, the "reading" and "programming" speeds are significantly improved. Investigations show that the polarization fluctuation at semiconductor/insulator interfaces, which affect the charge transport in conducting channels, can be suppressed effectively using our method.

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Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuation

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