Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuation

Huabin Sun, Qijing Wang, Yun Li, Yen Fu Lin, Yu Wang, Yao Yin, Yong Xu, Chuan Liu, Kazuhito Tsukagoshi, Lijia Pan, Xizhang Wang, Zheng Hu, Yi Shi

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)

Abstract

Ferroelectric organic field-effect transistors (Fe-OFETs) have been attractive for a variety of non-volatile memory device applications. One of the critical issues of Fe-OFETs is the improvement of carrier mobility in semiconducting channels. In this article, we propose a novel interfacial buffering method that inserts an ultrathin poly(methyl methacrylate) (PMMA) between ferroelectric polymer and organic semiconductor layers. A high field-effect mobility (μFET) up to 4.6 cm2 V-1 s-1 is obtained. Subsequently, the programming process in our Fe-OFETs is mainly dominated by the switching between two ferroelectric polarizations rather than by the mobility-determined charge accumulation at the channel. Thus, the "reading" and "programming" speeds are significantly improved. Investigations show that the polarization fluctuation at semiconductor/insulator interfaces, which affect the charge transport in conducting channels, can be suppressed effectively using our method.

Original languageEnglish
Article number7227
JournalScientific reports
Volume4
DOIs
Publication statusPublished - 2014 Nov 27
Externally publishedYes

ASJC Scopus subject areas

  • General

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