Abstract
Bondlengths of Si-Si, Si-Ge, and Ge-Ge pairs in Silicon-Germanium alloys were determined as a function of hydrostatic pressure using ab initio electronic structure calculations. A series of ordered structures was selected to represent the various atomic environments in actual alloys. Enthalpies of formation computed for these structures were used to model the phase stability under hydrostatic pressure.
| Original language | English |
|---|---|
| Pages (from-to) | 2201-2205 |
| Number of pages | 5 |
| Journal | Materials Transactions |
| Volume | 42 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2001 Nov |
Keywords
- Bondlength
- Hydrostatic pressure
- Phase diagram
- Phase stability
- Silicon-germanium alloy
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering