Bonding structure of ultrathin oxides on Si(110) surface

Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Kato, Maki Suemitsu, Yuzuru Narita, Yuden Teraoka, Akitaka Yoshigoe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The thermal oxidation kinetics of Si(110) surface up to oxide layer thickness of 1 ML has been investigated by real-time monitoring of chemical shift in the Si 2p core-level photoemission using synchrotron radiation. The uptake profiles of every Si oxidation states (Sin+: n = 1 - 4) indicate that the top surface Si(110) oxidation proceeds through a two-step oxidation pathway via Si2+ state, just like the Si(001) surface. In contrast to the Si(001) oxidation, however, Si3+ state is always more abundant than Si4+ state during oxidation. This is related to occurrence of imperfect oxidation of this surface, most probably due to accumulation of compressive strain during oxidation.

Original languageEnglish
Title of host publicationSynthesis and Metrology of Nanoscale Oxides and Thin Films
PublisherMaterials Research Society
Pages36-40
Number of pages5
ISBN (Print)9781605608556
DOIs
Publication statusPublished - 2008
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2008 Mar 242008 Mar 28

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1074
ISSN (Print)0272-9172

Other

Other2008 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period08/3/2408/3/28

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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