Bonding structure of ultrathin oxides on Si(110) surface

Yoshihisa Yamamoto; Hideaki Togashi; Atsushi Kato; Maki Suemitsu; Yuzuru Narita; Yuden Teraoka; Akitaka Yoshigoe

doi:10.1557/proc-1074-i03-50

Bonding structure of ultrathin oxides on Si(110) surface

Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Kato, Maki Suemitsu, Yuzuru Narita, Yuden Teraoka, Akitaka Yoshigoe

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Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The thermal oxidation kinetics of Si(110) surface up to oxide layer thickness of 1 ML has been investigated by real-time monitoring of chemical shift in the Si 2p core-level photoemission using synchrotron radiation. The uptake profiles of every Si oxidation states (Siⁿ⁺: n = 1 - 4) indicate that the top surface Si(110) oxidation proceeds through a two-step oxidation pathway via Si²⁺ state, just like the Si(001) surface. In contrast to the Si(001) oxidation, however, Si³⁺ state is always more abundant than Si⁴⁺ state during oxidation. This is related to occurrence of imperfect oxidation of this surface, most probably due to accumulation of compressive strain during oxidation.

Original language	English
Title of host publication	Synthesis and Metrology of Nanoscale Oxides and Thin Films
Publisher	Materials Research Society
Pages	36-40
Number of pages	5
ISBN (Print)	9781605608556
DOIs	https://doi.org/10.1557/proc-1074-i03-50
Publication status	Published - 2008
Event	2008 MRS Spring Meeting - San Francisco, CA, United States Duration: 2008 Mar 24 → 2008 Mar 28

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1074
ISSN (Print)	0272-9172

Other

Other	2008 MRS Spring Meeting
Country	United States
City	San Francisco, CA
Period	08/3/24 → 08/3/28

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Bonding structure of ultrathin oxides on Si(110) surface. / Yamamoto, Yoshihisa; Togashi, Hideaki; Kato, Atsushi; Suemitsu, Maki; Narita, Yuzuru; Teraoka, Yuden; Yoshigoe, Akitaka.

Synthesis and Metrology of Nanoscale Oxides and Thin Films. Materials Research Society, 2008. p. 36-40 (Materials Research Society Symposium Proceedings; Vol. 1074).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamamoto, Y, Togashi, H, Kato, A, Suemitsu, M, Narita, Y, Teraoka, Y & Yoshigoe, A 2008, Bonding structure of ultrathin oxides on Si(110) surface. in Synthesis and Metrology of Nanoscale Oxides and Thin Films. Materials Research Society Symposium Proceedings, vol. 1074, Materials Research Society, pp. 36-40, 2008 MRS Spring Meeting, San Francisco, CA, United States, 08/3/24. https://doi.org/10.1557/proc-1074-i03-50

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abstract = "The thermal oxidation kinetics of Si(110) surface up to oxide layer thickness of 1 ML has been investigated by real-time monitoring of chemical shift in the Si 2p core-level photoemission using synchrotron radiation. The uptake profiles of every Si oxidation states (Sin+: n = 1 - 4) indicate that the top surface Si(110) oxidation proceeds through a two-step oxidation pathway via Si2+ state, just like the Si(001) surface. In contrast to the Si(001) oxidation, however, Si3+ state is always more abundant than Si4+ state during oxidation. This is related to occurrence of imperfect oxidation of this surface, most probably due to accumulation of compressive strain during oxidation.",

author = "Yoshihisa Yamamoto and Hideaki Togashi and Atsushi Kato and Maki Suemitsu and Yuzuru Narita and Yuden Teraoka and Akitaka Yoshigoe",

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AU - Yamamoto, Yoshihisa

AU - Togashi, Hideaki

AU - Kato, Atsushi

AU - Suemitsu, Maki

AU - Narita, Yuzuru

AU - Teraoka, Yuden

AU - Yoshigoe, Akitaka

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N2 - The thermal oxidation kinetics of Si(110) surface up to oxide layer thickness of 1 ML has been investigated by real-time monitoring of chemical shift in the Si 2p core-level photoemission using synchrotron radiation. The uptake profiles of every Si oxidation states (Sin+: n = 1 - 4) indicate that the top surface Si(110) oxidation proceeds through a two-step oxidation pathway via Si2+ state, just like the Si(001) surface. In contrast to the Si(001) oxidation, however, Si3+ state is always more abundant than Si4+ state during oxidation. This is related to occurrence of imperfect oxidation of this surface, most probably due to accumulation of compressive strain during oxidation.

AB - The thermal oxidation kinetics of Si(110) surface up to oxide layer thickness of 1 ML has been investigated by real-time monitoring of chemical shift in the Si 2p core-level photoemission using synchrotron radiation. The uptake profiles of every Si oxidation states (Sin+: n = 1 - 4) indicate that the top surface Si(110) oxidation proceeds through a two-step oxidation pathway via Si2+ state, just like the Si(001) surface. In contrast to the Si(001) oxidation, however, Si3+ state is always more abundant than Si4+ state during oxidation. This is related to occurrence of imperfect oxidation of this surface, most probably due to accumulation of compressive strain during oxidation.

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