TY - GEN
T1 - Bonding structure of ultrathin oxides on Si(110) surface
AU - Yamamoto, Yoshihisa
AU - Togashi, Hideaki
AU - Kato, Atsushi
AU - Suemitsu, Maki
AU - Narita, Yuzuru
AU - Teraoka, Yuden
AU - Yoshigoe, Akitaka
PY - 2008
Y1 - 2008
N2 - The thermal oxidation kinetics of Si(110) surface up to oxide layer thickness of 1 ML has been investigated by real-time monitoring of chemical shift in the Si 2p core-level photoemission using synchrotron radiation. The uptake profiles of every Si oxidation states (Sin+: n = 1 - 4) indicate that the top surface Si(110) oxidation proceeds through a two-step oxidation pathway via Si2+ state, just like the Si(001) surface. In contrast to the Si(001) oxidation, however, Si3+ state is always more abundant than Si4+ state during oxidation. This is related to occurrence of imperfect oxidation of this surface, most probably due to accumulation of compressive strain during oxidation.
AB - The thermal oxidation kinetics of Si(110) surface up to oxide layer thickness of 1 ML has been investigated by real-time monitoring of chemical shift in the Si 2p core-level photoemission using synchrotron radiation. The uptake profiles of every Si oxidation states (Sin+: n = 1 - 4) indicate that the top surface Si(110) oxidation proceeds through a two-step oxidation pathway via Si2+ state, just like the Si(001) surface. In contrast to the Si(001) oxidation, however, Si3+ state is always more abundant than Si4+ state during oxidation. This is related to occurrence of imperfect oxidation of this surface, most probably due to accumulation of compressive strain during oxidation.
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U2 - 10.1557/proc-1074-i03-50
DO - 10.1557/proc-1074-i03-50
M3 - Conference contribution
AN - SCOPUS:70350312800
SN - 9781605608556
T3 - Materials Research Society Symposium Proceedings
SP - 36
EP - 40
BT - Synthesis and Metrology of Nanoscale Oxides and Thin Films
PB - Materials Research Society
T2 - 2008 MRS Spring Meeting
Y2 - 24 March 2008 through 28 March 2008
ER -