Body contacts in InP-based InAIAs/InGaAs HEMTs and their effects on breakdown voltage and kink suppression

T. Suemitsu; T. Enoki; Y. Ishii

doi:10.1049/el:19950496

Body contacts in InP-based InAIAs/InGaAs HEMTs and their effects on breakdown voltage and kink suppression

T. Suemitsu, T. Enoki, Y. Ishii

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The authors investigate the effects of body contacts in InP-based Ina_0.52Al_0.48|As/In_0.53Ga_0.47As HEMTs. A body contact connecting a floating InAIAs buffer to an ohmic electrode is formed by a buried p-layer and the Zn-diffused p -region in the electrode. The body contact successfully prevents holes generated by impact ionisation from accumulating in the channel, resulting in higher breakdown voltage and kink-free I/V characteristics.

Original language	English
Pages (from-to)	758-759
Number of pages	2
Journal	Electronics Letters
Volume	31
Issue number	9
DOIs	https://doi.org/10.1049/el:19950496
Publication status	Published - 1995 Apr 27
Externally published	Yes

Keywords

High electron mobility transistors
Ohmic contacts

ASJC Scopus subject areas

Electrical and Electronic Engineering

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abstract = "The authors investigate the effects of body contacts in InP-based Ina0.52Al0.48|As/In0.53Ga0.47As HEMTs. A body contact connecting a floating InAIAs buffer to an ohmic electrode is formed by a buried p-layer and the Zn-diffused p -region in the electrode. The body contact successfully prevents holes generated by impact ionisation from accumulating in the channel, resulting in higher breakdown voltage and kink-free I/V characteristics.",

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AU - Enoki, T.

AU - Ishii, Y.

PY - 1995/4/27

Y1 - 1995/4/27

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AB - The authors investigate the effects of body contacts in InP-based Ina0.52Al0.48|As/In0.53Ga0.47As HEMTs. A body contact connecting a floating InAIAs buffer to an ohmic electrode is formed by a buried p-layer and the Zn-diffused p -region in the electrode. The body contact successfully prevents holes generated by impact ionisation from accumulating in the channel, resulting in higher breakdown voltage and kink-free I/V characteristics.

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