The authors investigate the effects of body contacts in InP-based Ina0.52Al0.48|As/In0.53Ga0.47As HEMTs. A body contact connecting a floating InAIAs buffer to an ohmic electrode is formed by a buried p-layer and the Zn-diffused p -region in the electrode. The body contact successfully prevents holes generated by impact ionisation from accumulating in the channel, resulting in higher breakdown voltage and kink-free I/V characteristics.
- High electron mobility transistors
- Ohmic contacts
ASJC Scopus subject areas
- Electrical and Electronic Engineering