Body contacts in InP-based InAIAs/InGaAs HEMTs and their effects on breakdown voltage and kink suppression

T. Suemitsu, T. Enoki, Y. Ishii

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

The authors investigate the effects of body contacts in InP-based Ina0.52Al0.48|As/In0.53Ga0.47As HEMTs. A body contact connecting a floating InAIAs buffer to an ohmic electrode is formed by a buried p-layer and the Zn-diffused p -region in the electrode. The body contact successfully prevents holes generated by impact ionisation from accumulating in the channel, resulting in higher breakdown voltage and kink-free I/V characteristics.

Original languageEnglish
Pages (from-to)758-759
Number of pages2
JournalElectronics Letters
Volume31
Issue number9
DOIs
Publication statusPublished - 1995 Apr 27
Externally publishedYes

Keywords

  • High electron mobility transistors
  • Ohmic contacts

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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