Blue-green ZnCdSe/ZnSe MQW laser diode without GaAs buffer layer

Yoshihiro Kawaguchi, Tetsuichiro Ohno, Takashi Matsuoka

Research output: Contribution to conferencePaper

8 Citations (Scopus)

Abstract

ZnCdSe/ZnSe multi-quantum well (MQW) laser diodes without GaAs buffer layers have been fabricated using a single growth chamber MBE system. A five-second interruption in the MQW growth has been introduced to improve hetero-interface. To reduce series resistance, N-doping was adopted in ZnSe barrier layers of the MQW. On the other hand, Ga doping in this layer is shown to decrease the PL intensity of the MQW. Using these growth conditions, lasers in the wavelength of 492 nm have been successfully operated under pulse conditions at 90 K.

Original languageEnglish
Pages345-347
Number of pages3
DOIs
Publication statusPublished - 1992 Jan 1
Externally publishedYes
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

ASJC Scopus subject areas

  • Engineering(all)

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    Kawaguchi, Y., Ohno, T., & Matsuoka, T. (1992). Blue-green ZnCdSe/ZnSe MQW laser diode without GaAs buffer layer. 345-347. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, . https://doi.org/10.7567/ssdm.1992.s-i-7