Bipolar device and circuit technologies for future wireless communications

K. Washio, N. Shiramizu, M. Miura, T. Nakamura, K. Oda, T. Masuda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SiGe HBTs and their circuit technologies are suitable for future wireless communications. To achieve low 1/f-noise characteristics in RF applications, a SiGe HBT with a raised-emitter structure, fabricated by epitaxial growth of phosphorous-doped Si layers, was developed. Aimed at ultra-low power consumption in a wide range of microwave applications, a SiGe HBT fabricated by well-controlled SiGe/Si continuous epitaxial growth was developed. To improve the design process for Si-based RF-ICs, equivalent circuits for transmission lines under the slow-wave effect and for inductors under the peripheral ground effect were also demonstrated. Moreover, MMICs operating in the quasi-millimeter-wave region, namely, a 24-GHz LNA, a 27-GHz VCO, and a 24-GHz mixer were developed. In regards to these MMICs, new circuit technologies, namely, inductive biasing, merged transformer matching, and pseudo-stacked configuration, were developed.

Original languageEnglish
Title of host publication2009 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT
Pages261-272
Number of pages12
Edition1
DOIs
Publication statusPublished - 2009 Dec 1
Externally publishedYes
Event2nd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT II - Xian, China
Duration: 2009 Jul 52009 Jul 10

Publication series

NameECS Transactions
Number1
Volume22
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other2nd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT II
Country/TerritoryChina
CityXian
Period09/7/509/7/10

ASJC Scopus subject areas

  • Engineering(all)

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