TY - GEN
T1 - Bipolar device and circuit technologies for future wireless communications
AU - Washio, K.
AU - Shiramizu, N.
AU - Miura, M.
AU - Nakamura, T.
AU - Oda, K.
AU - Masuda, T.
PY - 2009
Y1 - 2009
N2 - SiGe HBTs and their circuit technologies are suitable for future wireless communications. To achieve low 1/f-noise characteristics in RF applications, a SiGe HBT with a raised-emitter structure, fabricated by epitaxial growth of phosphorous-doped Si layers, was developed. Aimed at ultra-low power consumption in a wide range of microwave applications, a SiGe HBT fabricated by well-controlled SiGe/Si continuous epitaxial growth was developed. To improve the design process for Si-based RF-ICs, equivalent circuits for transmission lines under the slow-wave effect and for inductors under the peripheral ground effect were also demonstrated. Moreover, MMICs operating in the quasi-millimeter-wave region, namely, a 24-GHz LNA, a 27-GHz VCO, and a 24-GHz mixer were developed. In regards to these MMICs, new circuit technologies, namely, inductive biasing, merged transformer matching, and pseudo-stacked configuration, were developed.
AB - SiGe HBTs and their circuit technologies are suitable for future wireless communications. To achieve low 1/f-noise characteristics in RF applications, a SiGe HBT with a raised-emitter structure, fabricated by epitaxial growth of phosphorous-doped Si layers, was developed. Aimed at ultra-low power consumption in a wide range of microwave applications, a SiGe HBT fabricated by well-controlled SiGe/Si continuous epitaxial growth was developed. To improve the design process for Si-based RF-ICs, equivalent circuits for transmission lines under the slow-wave effect and for inductors under the peripheral ground effect were also demonstrated. Moreover, MMICs operating in the quasi-millimeter-wave region, namely, a 24-GHz LNA, a 27-GHz VCO, and a 24-GHz mixer were developed. In regards to these MMICs, new circuit technologies, namely, inductive biasing, merged transformer matching, and pseudo-stacked configuration, were developed.
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U2 - 10.1149/1.3152983
DO - 10.1149/1.3152983
M3 - Conference contribution
AN - SCOPUS:84863169123
SN - 9781607682646
T3 - ECS Transactions
SP - 261
EP - 272
BT - 2009 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT
PB - Electrochemical Society Inc.
T2 - 2nd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT II
Y2 - 5 July 2009 through 10 July 2009
ER -