Bipolar device and circuit technologies for future wireless communications

K. Washio, N. Shiramizu, M. Miura, T. Nakamura, K. Oda, T. Masuda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SiGe HBTs and their circuit technologies are suitable for future wireless communications. To achieve low 1/f-noise characteristics in RF applications, a SiGe HBT with a raised-emitter structure, fabricated by epitaxial growth of phosphorous-doped Si layers, was developed. Aimed at ultra-low power consumption in a wide range of microwave applications, a SiGe HBT fabricated by well-controlled SiGe/Si continuous epitaxial growth was developed. To improve the design process for Si-based RF-ICs, equivalent circuits for transmission lines under the slow-wave effect and for inductors under the peripheral ground effect were also demonstrated. Moreover, MMICs operating in the quasi-millimeter-wave region, namely, a 24-GHz LNA, a 27-GHz VCO, and a 24-GHz mixer were developed. In regards to these MMICs, new circuit technologies, namely, inductive biasing, merged transformer matching, and pseudo-stacked configuration, were developed.

Original languageEnglish
Title of host publication2009 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT
PublisherElectrochemical Society Inc.
Pages261-272
Number of pages12
Edition1
ISBN (Electronic)9781607680857
ISBN (Print)9781607682646
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event2nd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT II - Xian, China
Duration: 2009 Jul 52009 Jul 10

Publication series

NameECS Transactions
Number1
Volume22
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other2nd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT II
Country/TerritoryChina
CityXian
Period09/7/509/7/10

ASJC Scopus subject areas

  • Engineering(all)

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