TY - JOUR
T1 - Biomedical pressure sensor using buried piezoresistors
AU - Esashi, Masayoshi
AU - Komatsu, Hiroshi
AU - Matsuo, Tadayuki
N1 - Funding Information:
This work was supported m part by the Japan Mmlstry of Education Science and Culture under Grant-m Aid for Sclentlflc Research, No 57850120,1982
PY - 1983
Y1 - 1983
N2 - The improvement of the base line stability of a silicon diaphragm piezoresistive pressure sensor is described. When a miniature pressure sensor mounted on a catheter tube is used for biomedical instrumentation, its surface is subject to ionic contamination, which causes electrical instabilities in the form of base line drift. The resistance modulation, which is attributed to the field effect of outer impurity ions, is proved experimentally to be the dominant mechanism of the drift. To eliminate the electrical drift, it is necessary to keep the resistance of piezoresistors constant, even if undesirable impurity ions exist. For this reason, a novel buried piezoresistor structure is proposed and studied experimentally. p+ piezoresistors were formed on a thin n- diaphragm 10 μm thich and were then buried under an n+ diffusion layer. This buried piezoresistor sensor gives an excellent stability (1.5 mmHg/day) in every atmosphere, including wet air.
AB - The improvement of the base line stability of a silicon diaphragm piezoresistive pressure sensor is described. When a miniature pressure sensor mounted on a catheter tube is used for biomedical instrumentation, its surface is subject to ionic contamination, which causes electrical instabilities in the form of base line drift. The resistance modulation, which is attributed to the field effect of outer impurity ions, is proved experimentally to be the dominant mechanism of the drift. To eliminate the electrical drift, it is necessary to keep the resistance of piezoresistors constant, even if undesirable impurity ions exist. For this reason, a novel buried piezoresistor structure is proposed and studied experimentally. p+ piezoresistors were formed on a thin n- diaphragm 10 μm thich and were then buried under an n+ diffusion layer. This buried piezoresistor sensor gives an excellent stability (1.5 mmHg/day) in every atmosphere, including wet air.
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U2 - 10.1016/0250-6874(83)85065-3
DO - 10.1016/0250-6874(83)85065-3
M3 - Article
AN - SCOPUS:0020899765
VL - 4
SP - 537
EP - 544
JO - Sensors and Actuators
JF - Sensors and Actuators
SN - 0250-6874
IS - C
ER -