A new method of sensing cation activity in the electrolyte which is particularly suitable for a micro cation sensor is described. The operation of this cation sensor is similar to that of the IGFET and its gate structure is electrolyte-insulator-semiconductor. The interface potential between electrolyte and the gate insulator varies selectively with the specific cation activity in the electrolyte, so that the conductivity of the channel is modulated by the cation activity. It was found that the cation sensor of which gate insulator surface is silicon nitride is sensitive to pH and is not sensitive to pNa and pK in solutions. A micro cation sensor with a tip size of about 60 mu m was fabricated for biomedical purpose.
|Number of pages||5|
|Publication status||Published - 1975 Jan 1|
|Event||Conf on Solid State Devices, 6th, Proc - Tokyo, Jpn|
Duration: 1974 Sep 2 → 1974 Sep 3
|Other||Conf on Solid State Devices, 6th, Proc|
|Period||74/9/2 → 74/9/3|
ASJC Scopus subject areas