BIOMEDICAL CATION SENSOR USING FIELD EFFECT OF SEMICONDUCTOR.

Masayoshi Esashi, Tadayuki Matsuo

Research output: Contribution to conferencePaperpeer-review

8 Citations (Scopus)

Abstract

A new method of sensing cation activity in the electrolyte which is particularly suitable for a micro cation sensor is described. The operation of this cation sensor is similar to that of the IGFET and its gate structure is electrolyte-insulator-semiconductor. The interface potential between electrolyte and the gate insulator varies selectively with the specific cation activity in the electrolyte, so that the conductivity of the channel is modulated by the cation activity. It was found that the cation sensor of which gate insulator surface is silicon nitride is sensitive to pH and is not sensitive to pNa and pK in solutions. A micro cation sensor with a tip size of about 60 mu m was fabricated for biomedical purpose.

Original languageEnglish
Pages339-343
Number of pages5
Publication statusPublished - 1975 Jan 1
Externally publishedYes
EventConf on Solid State Devices, 6th, Proc - Tokyo, Jpn
Duration: 1974 Sep 21974 Sep 3

Other

OtherConf on Solid State Devices, 6th, Proc
CityTokyo, Jpn
Period74/9/274/9/3

ASJC Scopus subject areas

  • Engineering(all)

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