Bilayer-by-bilayer etching of 6H-GaN(0 0 0 1) with Cl

S. Kuwano, Q. Z. Xue, Y. Asano, Y. Fujikawa, Q. K. Xue, Koji Nakayama, T. Nagao, T. Sakurai

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Etching of Ga-polar GaN(0 0 0 1) surface with Cl has been studied using scanning tunneling microscopy. Three different processes in the thermally activated Cl reaction, i.e., the removal of Ga-fluid, the formation of alternative zigzag and smooth steps, and the initiation of triangle pits on the terrace that take place at different temperatures, are identified. The atom removal is found to proceed via a bilayer-by-bilayer mode on the GaN surface, and the underlying mechanism is discussed in terms of the surface atomic structure.

Original languageEnglish
JournalSurface Science
Volume561
Issue number2-3
DOIs
Publication statusPublished - 2004 Jul 20

Keywords

  • Chlorine
  • Etching
  • Gallium nitride
  • Scanning tunneling microscopy
  • Surface structure, morphology, roughness, and topography
  • Thermal desorption

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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    Kuwano, S., Xue, Q. Z., Asano, Y., Fujikawa, Y., Xue, Q. K., Nakayama, K., Nagao, T., & Sakurai, T. (2004). Bilayer-by-bilayer etching of 6H-GaN(0 0 0 1) with Cl. Surface Science, 561(2-3). https://doi.org/10.1016/j.susc.2004.05.098