BiI3 single crystal for room-temperature gamma ray detectors

T. Saito, T. Iwasaki, S. Kurosawa, A. Yoshikawa, T. Den

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

BiI3 single crystals were grown by the physical vapor transport method. The repeated sublimation of the starting material reduced impurities in the BiI3 single crystal to sub-ppm levels. The detector was fabricated by depositing Au electrodes on both surfaces of the 100-μm-thick BiI3 single crystal platelet. The resistivity of the BiI3 single crystal was increased by post-annealing in an iodine atmosphere (ρ=1.6×1011 Ω cm). Pulse height spectroscopy measurements showed clear peaks in the energy spectrum of alpha particles or gamma rays. It was estimated that the mobility-lifetime product was μeτe=3.4-8.5×10-6 cm2/V and the electron-hole pair creation energy was 5.8 eV. Our results show that BiI3 single crystals are promising candidates for detectors used in radiographic imaging or gamma ray spectroscopy.

Original languageEnglish
Pages (from-to)395-400
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume806
DOIs
Publication statusPublished - 2016 Jan 11

Keywords

  • BiI
  • Detector
  • Gamma ray
  • Semiconductor
  • Single crystal

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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