Biexciton luminescence from individual isoelectronic traps in nitrogen δ-doped GaAs

Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi

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8 Citations (Scopus)


We report on the observation of biexciton luminescence from single isoelectronic traps formed by nitrogen-nitrogen pairs in nitrogen δ-doped GaAs. The biexciton luminescence intensity showed a quadratic dependence on the excitation power while the exciton luminescence intensity increased linearly with increasing excitation power. The biexciton binding energy was found to be 8 meV, which is considerably larger than that reported for single InAs quantum dots in GaAs. We have also found that both the biexciton and exciton emission lines show completely unpolarized and no fine-structure splitting. This is suitable for the application to polarization-entangled photon pairs.

Original languageEnglish
Article number111201
JournalApplied Physics Express
Issue number11
Publication statusPublished - 2012 Nov

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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