TY - GEN
T1 - Bias voltage dependency of plasmonic instability and terahertz radiation in a dual-grating-gate high-electron-mobility transistor
AU - Hosotani, Tomotaka
AU - Satou, Akira
AU - Otsuji, Taiichi
N1 - Funding Information:
This work was financially supported by JSPS-KAKENHI No. 18J21073, 18H053311, and 20K20349, Japan. The authors thank NTT-AT Corp. for cooperation in processing the sample fabrication. The partial device process and SEM observation were done at the Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University, Japan.
Publisher Copyright:
© OSA 2021, © 2021 The Author(s)
PY - 2021
Y1 - 2021
N2 - We report on terahertz (THz) radiation from a current-driven InGaAs-based dual-grating-gate high-electron-mobility transistor (DGG-HEMT) excited by photomixed laser irradiation. We show the bias voltage dependency of THz radiation emission spectra on DC-current-driven plasmonic instabilities.
AB - We report on terahertz (THz) radiation from a current-driven InGaAs-based dual-grating-gate high-electron-mobility transistor (DGG-HEMT) excited by photomixed laser irradiation. We show the bias voltage dependency of THz radiation emission spectra on DC-current-driven plasmonic instabilities.
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M3 - Conference contribution
AN - SCOPUS:85119472570
T3 - Optics InfoBase Conference Papers
BT - CLEO
PB - The Optical Society
T2 - CLEO: Applications and Technology, CLEO:A and T 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021
Y2 - 9 May 2021 through 14 May 2021
ER -