Bias voltage dependence properties of Nb-doped indium tin oxide thin films by RF magnetron sputtering at room temperature

Shi Na Li, Rui Xin Ma, Chun Hong Ma, Yu Qin Xiao, Dong Ran Li, Liang Wei He, Hong Min Zhu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Niobium doped indium tin oxide (ITO:Nb) thin films were fabricated on glass substrates by RF magnetron sputtering from one piece of ceramic target material at room temperature. The bias voltage dependence of properties of the ITO:Nb films were investigated by adjusting the bias voltage. Structural, electrical and optical properties of the films were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), UV-visible spectroscopy, and electrical measurements. XRD patterns showed a change in the preferential orientations of polycrystalline crystalline structure from (222) to (400) crystal plane with the increase of negative bias voltage. AFM analysis revealed that the smooth film was obtained at a negative bias voltage of -120 V. The root mean square (RMS) roughness and the average roughness are 1.37 nm and 1.77 nm, respectively. The films with the lowest resistivity as low as 1.45×10-4 Ω cm and transmittance over 88% have been obtained at a negative bias voltage of -120 V. Band gap energy of the films, depends on substrate temperature, varied from 3.56 eV to 3.62 eV.

Original languageEnglish
Pages (from-to)216-221
Number of pages6
JournalMaterials Science in Semiconductor Processing
Volume17
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes

Keywords

  • Electrical and optical properties
  • ITO:Nb
  • Negative bias
  • RF magnetron sputtering

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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