Bias voltage dependence of tunneling magnetoresistance in granular C 60Co films with current-perpendicular-to-plane geometry

Seiji Sakai, Seiji Mitani, Yoshihiro Matsumoto, Shiro Entani, Pavel Avramov, Manabu Ohtomo, Hiroshi Naramoto, Koki Takanashi

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Voltage-dependence of the tunneling magnetoresistance effect in the granular C 60Co films has been investigated for the samples with the current-perpendicular-to-plane geometry. The transport measurements under this geometry demonstrate that the granular C 60Co films show an unusual exponential bias voltage dependence of the magnetoresistance ratio down to zero voltage. Small characteristic energies of less than 10s meV are derived from the temperature dependences of the characteristic voltage in the exponential relationship. Considering the magnitudes of the voltage drop between Co nanoparticles and also the effect of cotunneling on the energy values, the characteristic energies for the voltage-induced degradation of the spin polarization are found to show a satisfactory agreement with that for the thermally-induced one. It can be reasonably expected that the onset of magnetic disorder to the localized d-electron spins at the interface region of the C 60-based matrix (C 60Co compound) with Co nanoparticles leading to the unusual voltage and temperature dependence of the magnetoresistance ratio and the spin polarization at low temperatures.

Original languageEnglish
Pages (from-to)1970-1974
Number of pages5
JournalJournal of Magnetism and Magnetic Materials
Issue number12
Publication statusPublished - 2012 Jun


  • Cobalt
  • Fullerene
  • Granular film
  • Nanocarbonmagnetic metal hybrid structure
  • Spin polarization
  • Tunneling magnetoresitance effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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