Bias voltage dependence of tunnel magnetoresistance effect in spin-valve type MnIr/NiFe/Co90Fe10/SrTiO3/La0.7Sr 0.3MnO3 tunnel junctions

Jun Hayakawa, Satoshi Kokado, Kenchi Ito, Mikito Sugiyama, Hidefumi Asano, Masaaki Matsui, Akimasa Sakuma, Masahiko Ichimura

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The dependence of the tunnel magnetoresistance (TMR) effect on bias voltage is based on the fabrication condition of the SrTiO3 (STO) barrier in spin-valve type MnIr/NiFe/Co90Fe10/SrTiO3/La0.7Sr 0.3MnO3 (LSMO). In a TMR junction having an STO barrier deposited at a substrate temperature (Ts) of 500°C in a pure Ar atmosphere, the TMR ratio decreased symmetrically with respect to the bias voltage direction. When the STO barrier was deposited at higher Ts and under higher O2 partial pressure, the TMR junction exhibited a more asymmetrical dependence. The non-stoichiometry of STO may modify the band structure of interfacial LSMO and reduce the asymmetry of the bias voltage dependence.

Original languageEnglish
Pages (from-to)1340-1342
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number3 A
Publication statusPublished - 2002 Mar 1

Keywords

  • Bias voltage dependence
  • Half-metallic ferromagnet
  • LaSrMnO
  • SrTiO barrier
  • Tunnel magnetoresistance effect

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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