Bias voltage dependence of tunnel magnetoresistance effect in spin-valve type MnIr/NiFe/Co90Fe10/SrTiO3/La0.7Sr 0.3MnO3 tunnel junctions

Jun Hayakawa; Satoshi Kokado; Kenchi Ito; Mikito Sugiyama; Hidefumi Asano; Masaaki Matsui; Akimasa Sakuma; Masahiko Ichimura

doi:10.1143/jjap.41.1340

Bias voltage dependence of tunnel magnetoresistance effect in spin-valve type MnIr/NiFe/Co₉₀Fe₁₀/SrTiO₃/La_0.7Sr _0.3MnO₃ tunnel junctions

Jun Hayakawa, Satoshi Kokado, Kenchi Ito, Mikito Sugiyama, Hidefumi Asano, Masaaki Matsui, Akimasa Sakuma, Masahiko Ichimura

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The dependence of the tunnel magnetoresistance (TMR) effect on bias voltage is based on the fabrication condition of the SrTiO₃ (STO) barrier in spin-valve type MnIr/NiFe/Co₉₀Fe₁₀/SrTiO₃/La_0.7Sr _0.3MnO₃ (LSMO). In a TMR junction having an STO barrier deposited at a substrate temperature (T_s) of 500°C in a pure Ar atmosphere, the TMR ratio decreased symmetrically with respect to the bias voltage direction. When the STO barrier was deposited at higher T_s and under higher O₂ partial pressure, the TMR junction exhibited a more asymmetrical dependence. The non-stoichiometry of STO may modify the band structure of interfacial LSMO and reduce the asymmetry of the bias voltage dependence.

Original language	English
Pages (from-to)	1340-1342
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	3 A
DOIs	https://doi.org/10.1143/jjap.41.1340
Publication status	Published - 2002 Mar
Externally published	Yes

Keywords

Bias voltage dependence
Half-metallic ferromagnet
LaSrMnO
SrTiO barrier
Tunnel magnetoresistance effect

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.41.1340

Cite this

Hayakawa, J., Kokado, S., Ito, K., Sugiyama, M., Asano, H., Matsui, M., Sakuma, A., & Ichimura, M. (2002). Bias voltage dependence of tunnel magnetoresistance effect in spin-valve type MnIr/NiFe/Co₉₀Fe₁₀/SrTiO₃/La_0.7Sr _0.3MnO₃ tunnel junctions. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 41(3 A), 1340-1342. https://doi.org/10.1143/jjap.41.1340

Bias voltage dependence of tunnel magnetoresistance effect in spin-valve type MnIr/NiFe/Co₉₀Fe₁₀/SrTiO₃/La_0.7Sr _0.3MnO₃ tunnel junctions. / Hayakawa, Jun; Kokado, Satoshi; Ito, Kenchi; Sugiyama, Mikito; Asano, Hidefumi; Matsui, Masaaki; Sakuma, Akimasa; Ichimura, Masahiko.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 3 A, 03.2002, p. 1340-1342.

Research output: Contribution to journal › Article › peer-review

Hayakawa, J, Kokado, S, Ito, K, Sugiyama, M, Asano, H, Matsui, M, Sakuma, A & Ichimura, M 2002, 'Bias voltage dependence of tunnel magnetoresistance effect in spin-valve type MnIr/NiFe/Co₉₀Fe₁₀/SrTiO₃/La_0.7Sr _0.3MnO₃ tunnel junctions', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 41, no. 3 A, pp. 1340-1342. https://doi.org/10.1143/jjap.41.1340

Hayakawa, Jun ; Kokado, Satoshi ; Ito, Kenchi ; Sugiyama, Mikito ; Asano, Hidefumi ; Matsui, Masaaki ; Sakuma, Akimasa ; Ichimura, Masahiko. / Bias voltage dependence of tunnel magnetoresistance effect in spin-valve type MnIr/NiFe/Co₉₀Fe₁₀/SrTiO₃/La_0.7Sr _0.3MnO₃ tunnel junctions. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2002 ; Vol. 41, No. 3 A. pp. 1340-1342.

@article{4a1f2e2d4cb34a819dcfb9114f5e6792,

title = "Bias voltage dependence of tunnel magnetoresistance effect in spin-valve type MnIr/NiFe/Co90Fe10/SrTiO3/La0.7Sr 0.3MnO3 tunnel junctions",

abstract = "The dependence of the tunnel magnetoresistance (TMR) effect on bias voltage is based on the fabrication condition of the SrTiO3 (STO) barrier in spin-valve type MnIr/NiFe/Co90Fe10/SrTiO3/La0.7Sr 0.3MnO3 (LSMO). In a TMR junction having an STO barrier deposited at a substrate temperature (Ts) of 500°C in a pure Ar atmosphere, the TMR ratio decreased symmetrically with respect to the bias voltage direction. When the STO barrier was deposited at higher Ts and under higher O2 partial pressure, the TMR junction exhibited a more asymmetrical dependence. The non-stoichiometry of STO may modify the band structure of interfacial LSMO and reduce the asymmetry of the bias voltage dependence.",

keywords = "Bias voltage dependence, Half-metallic ferromagnet, LaSrMnO, SrTiO barrier, Tunnel magnetoresistance effect",

author = "Jun Hayakawa and Satoshi Kokado and Kenchi Ito and Mikito Sugiyama and Hidefumi Asano and Masaaki Matsui and Akimasa Sakuma and Masahiko Ichimura",

year = "2002",

month = mar,

doi = "10.1143/jjap.41.1340",

language = "English",

volume = "41",

pages = "1340--1342",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3 A",

}

TY - JOUR

T1 - Bias voltage dependence of tunnel magnetoresistance effect in spin-valve type MnIr/NiFe/Co90Fe10/SrTiO3/La0.7Sr 0.3MnO3 tunnel junctions

AU - Hayakawa, Jun

AU - Kokado, Satoshi

AU - Ito, Kenchi

AU - Sugiyama, Mikito

AU - Asano, Hidefumi

AU - Matsui, Masaaki

AU - Sakuma, Akimasa

AU - Ichimura, Masahiko

PY - 2002/3

Y1 - 2002/3

N2 - The dependence of the tunnel magnetoresistance (TMR) effect on bias voltage is based on the fabrication condition of the SrTiO3 (STO) barrier in spin-valve type MnIr/NiFe/Co90Fe10/SrTiO3/La0.7Sr 0.3MnO3 (LSMO). In a TMR junction having an STO barrier deposited at a substrate temperature (Ts) of 500°C in a pure Ar atmosphere, the TMR ratio decreased symmetrically with respect to the bias voltage direction. When the STO barrier was deposited at higher Ts and under higher O2 partial pressure, the TMR junction exhibited a more asymmetrical dependence. The non-stoichiometry of STO may modify the band structure of interfacial LSMO and reduce the asymmetry of the bias voltage dependence.

AB - The dependence of the tunnel magnetoresistance (TMR) effect on bias voltage is based on the fabrication condition of the SrTiO3 (STO) barrier in spin-valve type MnIr/NiFe/Co90Fe10/SrTiO3/La0.7Sr 0.3MnO3 (LSMO). In a TMR junction having an STO barrier deposited at a substrate temperature (Ts) of 500°C in a pure Ar atmosphere, the TMR ratio decreased symmetrically with respect to the bias voltage direction. When the STO barrier was deposited at higher Ts and under higher O2 partial pressure, the TMR junction exhibited a more asymmetrical dependence. The non-stoichiometry of STO may modify the band structure of interfacial LSMO and reduce the asymmetry of the bias voltage dependence.

KW - Bias voltage dependence

KW - Half-metallic ferromagnet

KW - LaSrMnO

KW - SrTiO barrier

KW - Tunnel magnetoresistance effect

UR - http://www.scopus.com/inward/record.url?scp=0036509170&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036509170&partnerID=8YFLogxK

U2 - 10.1143/jjap.41.1340

DO - 10.1143/jjap.41.1340

M3 - Article

AN - SCOPUS:0036509170

VL - 41

SP - 1340

EP - 1342

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3 A

ER -