Bias-voltage application in hard x-ray photoelectron spectroscopy for characterization of advanced materials

Yoshiyuki Yamashita, Kenji Ohmori, Shigenori Ueda, Hideki Yoshikawa, Toyohiro Chikyow, Keisuke Kobayashi

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

We employed bias-voltage-application in hard x-ray photoelectron spectroscopy (BA-HXPES) to detect electronic states of materials in operating devices. To demonstrate the versatility of this method, we used a metal/SiO 2/Si(100) structure as an ideal platform and found that electronic states at the SiO2/Si(100) interface were changed depending on the bias-application to the structure. By analyzing the change as a function of bias-voltage, the interface electronic states in the whole Si gap have been directly obtained in which these states cannot be detected without the bias-application. BA-HXPES is a new method to characterize electronic states for advanced materials under device operation.

Original languageEnglish
Pages (from-to)81-83
Number of pages3
Journale-Journal of Surface Science and Nanotechnology
Volume8
DOIs
Publication statusPublished - 2010 Feb 27

Keywords

  • Crystalline-amorphous interfaces
  • Silicon
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Biotechnology
  • Bioengineering
  • Condensed Matter Physics
  • Mechanics of Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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