Bias-voltage application in a hard x-ray photoelectron spectroscopic study of the interface states at oxide/Si(100) interfaces

Yoshiyuki Yamashita, Hideki Yoshikawa, Toyohiro Chikyow, Keisuke Kobayashi

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

The energy distribution of the interface states in the Si band-gap at an ultrathin oxide/Si(100) interface was investigated using a bias-voltage application in hard x-ray photoelectron spectroscopy. For the SiO2/Si interface, interface states were observed near the mid-gap, whereas the interface states for the SiON/Si interface increased around the mid-gap and new states formed near the conduction band minimum (CBM) and valence band maximum (VBM) compared to the case of the SiO2/Si interface. Moreover, the interface state density increased with the nitrogen concentration in the oxide, but the spectral shape was independent of the nitrogen concentration. The N1s spectra indicated that the N-O species at the SiON/Si interface induced inhomogeneous interface sites. Because inhomogeneity might break or weaken bonds at the SiON/Si interface, the density of broken bonds (the mid-gap states) and weakened bonds (the states near VBM and CBM) at the interface increased as the number of inhomogeneous sites increased.

Original languageEnglish
Article number163707
JournalJournal of Applied Physics
Volume113
Issue number16
DOIs
Publication statusPublished - 2013 Apr 28
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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