TY - JOUR
T1 - Bias-voltage application in a hard x-ray photoelectron spectroscopic study of the interface states at oxide/Si(100) interfaces
AU - Yamashita, Yoshiyuki
AU - Yoshikawa, Hideki
AU - Chikyow, Toyohiro
AU - Kobayashi, Keisuke
N1 - Funding Information:
This work was supported in part by a Grant-in-Aid for Scientific Research on Priority Areas, (Grant Nos. 17069006 and 23560033), from the Ministry of Education, Culture, Sports, Science and Technology of Japan. The authors thank Selete for sample preparation, and are grateful to HiSOR, Hiroshima University and JAEA/SPring-8 for the development of HXPES in BL15XU at SPring-8. The BA-HXPES measurements were performed under the approval of NIMS Beamline Station (Proposal Nos. 2009B4800 and 2010B4800).
PY - 2013/4/28
Y1 - 2013/4/28
N2 - The energy distribution of the interface states in the Si band-gap at an ultrathin oxide/Si(100) interface was investigated using a bias-voltage application in hard x-ray photoelectron spectroscopy. For the SiO2/Si interface, interface states were observed near the mid-gap, whereas the interface states for the SiON/Si interface increased around the mid-gap and new states formed near the conduction band minimum (CBM) and valence band maximum (VBM) compared to the case of the SiO2/Si interface. Moreover, the interface state density increased with the nitrogen concentration in the oxide, but the spectral shape was independent of the nitrogen concentration. The N1s spectra indicated that the N-O species at the SiON/Si interface induced inhomogeneous interface sites. Because inhomogeneity might break or weaken bonds at the SiON/Si interface, the density of broken bonds (the mid-gap states) and weakened bonds (the states near VBM and CBM) at the interface increased as the number of inhomogeneous sites increased.
AB - The energy distribution of the interface states in the Si band-gap at an ultrathin oxide/Si(100) interface was investigated using a bias-voltage application in hard x-ray photoelectron spectroscopy. For the SiO2/Si interface, interface states were observed near the mid-gap, whereas the interface states for the SiON/Si interface increased around the mid-gap and new states formed near the conduction band minimum (CBM) and valence band maximum (VBM) compared to the case of the SiO2/Si interface. Moreover, the interface state density increased with the nitrogen concentration in the oxide, but the spectral shape was independent of the nitrogen concentration. The N1s spectra indicated that the N-O species at the SiON/Si interface induced inhomogeneous interface sites. Because inhomogeneity might break or weaken bonds at the SiON/Si interface, the density of broken bonds (the mid-gap states) and weakened bonds (the states near VBM and CBM) at the interface increased as the number of inhomogeneous sites increased.
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U2 - 10.1063/1.4803491
DO - 10.1063/1.4803491
M3 - Article
AN - SCOPUS:84877295341
VL - 113
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 16
M1 - 163707
ER -