TY - JOUR
T1 - Bias temperature instability in tunnel field-effect transistors
AU - Mizubayashi, Wataru
AU - Mori, Takahiro
AU - Fukuda, Koichi
AU - Ishikawa, Yuki
AU - Morita, Yukinori
AU - Migita, Shinji
AU - Ota, Hiroyuki
AU - Liu, Yongxun
AU - O'Uchi, Shinichi
AU - Tsukada, Junichi
AU - Yamauchi, Hiromi
AU - Matsukawa, Takashi
AU - Masahara, Meishoku
AU - Endo, Kazuhiko
N1 - Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/4
Y1 - 2017/4
N2 - We systematically investigated the bias temperature instability (BTI) of tunnel field-effect transistors (TFETs). The positive BTI and negative BTI mechanisms in TFETs are the same as those in metal-oxide-semiconductor FETs (MOSFETs). In TFETs, although traps are generated in high-k gate dielectrics by the bias stress and/or the interface state is degraded at the interfacial layer/channel interface, the threshold voltage (Vth) shift due to BTI degradation is caused by the traps and/or the degradation of the interface state locating the band-to-band tunneling (BTBT) region near the source/gate edge. The BTI lifetime in n- and p-type TFETs is improved by applying a drain bias corresponding to the operation conditions.
AB - We systematically investigated the bias temperature instability (BTI) of tunnel field-effect transistors (TFETs). The positive BTI and negative BTI mechanisms in TFETs are the same as those in metal-oxide-semiconductor FETs (MOSFETs). In TFETs, although traps are generated in high-k gate dielectrics by the bias stress and/or the interface state is degraded at the interfacial layer/channel interface, the threshold voltage (Vth) shift due to BTI degradation is caused by the traps and/or the degradation of the interface state locating the band-to-band tunneling (BTBT) region near the source/gate edge. The BTI lifetime in n- and p-type TFETs is improved by applying a drain bias corresponding to the operation conditions.
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U2 - 10.7567/JJAP.56.04CA04
DO - 10.7567/JJAP.56.04CA04
M3 - Article
AN - SCOPUS:85017113595
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4
M1 - 04CA04
ER -