Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs

Tetsuya Suemitsu; Yoshino K. Fukai; Hiroki Sugiyama; Kazuo Watanabe; Haruki Yokoyama

doi:10.1016/S0026-2714(01)00215-3

Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs

Tetsuya Suemitsu, Yoshino K. Fukai, Hiroki Sugiyama, Kazuo Watanabe, Haruki Yokoyama

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias-and-temperature stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (R_s) to increase at large drain bias voltages. The increase in R_s can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, the increase in the drain resistance (R_d) does not depend on the material of the carrier supply layer, which suggests that a mechanism different from that in the case of R_s should be considered. It is also found that a deep gate recess suppresses the increase in R_d after long-term stressing.

Original language	English
Pages (from-to)	47-52
Number of pages	6
Journal	Microelectronics Reliability
Volume	42
Issue number	1
DOIs	https://doi.org/10.1016/S0026-2714(01)00215-3
Publication status	Published - 2002 Jan
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0026-2714(01)00215-3

Cite this

@article{c3174abd42284cf9b7f1659820bcf13c,

title = "Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs",

abstract = "The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias-and-temperature stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (Rs) to increase at large drain bias voltages. The increase in Rs can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, the increase in the drain resistance (Rd) does not depend on the material of the carrier supply layer, which suggests that a mechanism different from that in the case of Rs should be considered. It is also found that a deep gate recess suppresses the increase in Rd after long-term stressing.",

author = "Tetsuya Suemitsu and Fukai, {Yoshino K.} and Hiroki Sugiyama and Kazuo Watanabe and Haruki Yokoyama",

year = "2002",

month = jan,

doi = "10.1016/S0026-2714(01)00215-3",

language = "English",

volume = "42",

pages = "47--52",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs

AU - Suemitsu, Tetsuya

AU - Fukai, Yoshino K.

AU - Sugiyama, Hiroki

AU - Watanabe, Kazuo

AU - Yokoyama, Haruki

PY - 2002/1

Y1 - 2002/1

N2 - The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias-and-temperature stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (Rs) to increase at large drain bias voltages. The increase in Rs can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, the increase in the drain resistance (Rd) does not depend on the material of the carrier supply layer, which suggests that a mechanism different from that in the case of Rs should be considered. It is also found that a deep gate recess suppresses the increase in Rd after long-term stressing.

AB - The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias-and-temperature stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (Rs) to increase at large drain bias voltages. The increase in Rs can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, the increase in the drain resistance (Rd) does not depend on the material of the carrier supply layer, which suggests that a mechanism different from that in the case of Rs should be considered. It is also found that a deep gate recess suppresses the increase in Rd after long-term stressing.

UR - http://www.scopus.com/inward/record.url?scp=0036133653&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036133653&partnerID=8YFLogxK

U2 - 10.1016/S0026-2714(01)00215-3

DO - 10.1016/S0026-2714(01)00215-3

M3 - Article

AN - SCOPUS:0036133653

VL - 42

SP - 47

EP - 52

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 1

ER -

Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs

Abstract

ASJC Scopus subject areas

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