Bias dependent potential distribution of a Pt/HfO2/SiO 2/Si gate structure obtained from a bias application in hard X-ray photoelectron spectroscopy

Yoshiyuki Yamashita, Hideki Yoshikawa, Toyohiro Chikyo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The electronic states and potential distribution throughout a Pt gate metal/high-k gate-stack structure were investigated using a bias application in hard X-ray photoelectron spectroscopy. Analyzing the core level shifts as functions of the applied bias voltage indicates that a potential gradient forms at the Pt/HfO2 interface.

Original languageEnglish
Article number05FH05
JournalJapanese journal of applied physics
Volume53
Issue number5 SPEC. ISSUE 1
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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