Bias dependence of STM profiles around the quantum point contact

K. Nagaoka, S. Yaginuma, T. Nagao, T. Nakayama

    Research output: Contribution to journalArticle

    Abstract

    We report atomic-scale quantum point contacts (QPCs) formed parallel to the substrate surface. The QPCs are formed in domain boundary of a multidomain Bi{0 1 2} film on a Si(1 1 1)-β√3 × √3-Bi substrate, thus direct observation of the QPCs with a scanning tunneling microscope (STM) is possible. Bias dependence of STM images indicates that a localized electronic state exists near the Fermi level around the QPC. Presumably, the localized state originates from the electronic confinement in a cylindrical potential well along the conduction channel through the QPC.

    Original languageEnglish
    Pages (from-to)4319-4322
    Number of pages4
    JournalSurface Science
    Volume600
    Issue number18
    DOIs
    Publication statusPublished - 2006 Sep 15

    Keywords

    • Bismuth (Bi)
    • Nanostructures
    • Quantum confinement
    • Reflection high-energy electron diffraction (RHEED)
    • Scanning tunneling microscopy (STM)
    • Silicon (Si)
    • Thin film structure

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Materials Chemistry

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  • Cite this

    Nagaoka, K., Yaginuma, S., Nagao, T., & Nakayama, T. (2006). Bias dependence of STM profiles around the quantum point contact. Surface Science, 600(18), 4319-4322. https://doi.org/10.1016/j.susc.2006.01.160