Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure

T. Nagata, M. Haemori, Y. Yamashita, H. Yoshikawa, Y. Iwashita, K. Kobayashi, T. Chikyow

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58 Citations (Scopus)

Abstract

The forming process of Cu/HfO2/Pt, which is an oxide based resistive random access memory (ReRAM), structure that exhibited resistance switching behavior at a voltage of 1.3 V was investigated by hard x-ray photoelectron spectroscopy under bias operation. A bias application to the structure reduced the Cu2O bonding state at the interface and the intensity ratio of Cu 2p3/2/Hf 3d5/2, providing the evidence of Cu2O reduction and Cu diffusion into the HfO2 layer. We directly observed Cu diffusion at the Cu/HfO2 interface under device operation, which is the evidence of the metal filament formation in the oxide-based ReRAM.

Original languageEnglish
Article number223517
JournalApplied Physics Letters
Volume99
Issue number22
DOIs
Publication statusPublished - 2011 Nov 28
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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