Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure

T. Nagata; M. Haemori; Y. Yamashita; H. Yoshikawa; Y. Iwashita; K. Kobayashi; T. Chikyow

doi:10.1063/1.3664781

Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO₂/Pt resistive random access memory structure

T. Nagata, M. Haemori, Y. Yamashita, H. Yoshikawa, Y. Iwashita, K. Kobayashi, T. Chikyow

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

The forming process of Cu/HfO₂/Pt, which is an oxide based resistive random access memory (ReRAM), structure that exhibited resistance switching behavior at a voltage of 1.3 V was investigated by hard x-ray photoelectron spectroscopy under bias operation. A bias application to the structure reduced the Cu₂O bonding state at the interface and the intensity ratio of Cu 2p_3/2/Hf 3d_5/2, providing the evidence of Cu₂O reduction and Cu diffusion into the HfO₂ layer. We directly observed Cu diffusion at the Cu/HfO₂ interface under device operation, which is the evidence of the metal filament formation in the oxide-based ReRAM.

Original language	English
Article number	223517
Journal	Applied Physics Letters
Volume	99
Issue number	22
DOIs	https://doi.org/10.1063/1.3664781
Publication status	Published - 2011 Nov 28
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3664781

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title = "Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure",

abstract = "The forming process of Cu/HfO2/Pt, which is an oxide based resistive random access memory (ReRAM), structure that exhibited resistance switching behavior at a voltage of 1.3 V was investigated by hard x-ray photoelectron spectroscopy under bias operation. A bias application to the structure reduced the Cu2O bonding state at the interface and the intensity ratio of Cu 2p3/2/Hf 3d5/2, providing the evidence of Cu2O reduction and Cu diffusion into the HfO2 layer. We directly observed Cu diffusion at the Cu/HfO2 interface under device operation, which is the evidence of the metal filament formation in the oxide-based ReRAM.",

author = "T. Nagata and M. Haemori and Y. Yamashita and H. Yoshikawa and Y. Iwashita and K. Kobayashi and T. Chikyow",

note = "Funding Information: We are grateful to HiSOR, Hiroshima University, and JAEA/SPring-8 for the development of HX-PES at BL15XU in SPring-8. The HX-PES measurements were performed with the approval of the NIMS Beamline Station (Proposal Nos. 2009 A 4600 and 2010B 4600). This work was supported in part by the Key-Technology Research Project, “Atomic Switch Programmed Device” and Grant-in-Aid for Scientific Research (C) 20510099, the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan.",

year = "2011",

month = nov,

day = "28",

doi = "10.1063/1.3664781",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

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AU - Nagata, T.

AU - Haemori, M.

AU - Yamashita, Y.

AU - Yoshikawa, H.

AU - Iwashita, Y.

AU - Kobayashi, K.

AU - Chikyow, T.

N1 - Funding Information: We are grateful to HiSOR, Hiroshima University, and JAEA/SPring-8 for the development of HX-PES at BL15XU in SPring-8. The HX-PES measurements were performed with the approval of the NIMS Beamline Station (Proposal Nos. 2009 A 4600 and 2010B 4600). This work was supported in part by the Key-Technology Research Project, “Atomic Switch Programmed Device” and Grant-in-Aid for Scientific Research (C) 20510099, the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan.

PY - 2011/11/28

Y1 - 2011/11/28

N2 - The forming process of Cu/HfO2/Pt, which is an oxide based resistive random access memory (ReRAM), structure that exhibited resistance switching behavior at a voltage of 1.3 V was investigated by hard x-ray photoelectron spectroscopy under bias operation. A bias application to the structure reduced the Cu2O bonding state at the interface and the intensity ratio of Cu 2p3/2/Hf 3d5/2, providing the evidence of Cu2O reduction and Cu diffusion into the HfO2 layer. We directly observed Cu diffusion at the Cu/HfO2 interface under device operation, which is the evidence of the metal filament formation in the oxide-based ReRAM.

AB - The forming process of Cu/HfO2/Pt, which is an oxide based resistive random access memory (ReRAM), structure that exhibited resistance switching behavior at a voltage of 1.3 V was investigated by hard x-ray photoelectron spectroscopy under bias operation. A bias application to the structure reduced the Cu2O bonding state at the interface and the intensity ratio of Cu 2p3/2/Hf 3d5/2, providing the evidence of Cu2O reduction and Cu diffusion into the HfO2 layer. We directly observed Cu diffusion at the Cu/HfO2 interface under device operation, which is the evidence of the metal filament formation in the oxide-based ReRAM.

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Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO₂/Pt resistive random access memory structure

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