Bi-Sr-Ca-Cu-O intrinsic josephson junctions fabricated by inhibitory ion implantation

K. Nakajima; N. Yaraada; J. Chen; T. Yamashita; S. Watauchi; Tanaka; H. Kojima

doi:10.1109/77.784029

Bi-Sr-Ca-Cu-O intrinsic josephson junctions fabricated by inhibitory ion implantation

K. Nakajima, N. Yaraada, J. Chen, T. Yamashita, S. Watauchi, Tanaka, H. Kojima

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Intrinsic Josephson junctions were fabricated by silicon (Si) ion implantation into Bi-Sr-Ca-Cu-O (BSCCO) single crystals of 2212 phase grown by the traveling solvent floating zone (TSFZ) method. Si ions with the acceleration energy of SOkeV were implanted into BSCCO. Si-implanted portion of BSCCO turned to insulator and defined junctions precisely. The project range of Si into BSCCO controls thickness of intrinsic junctions. The junction exhibited a typical current-voltage characteristic of the BSCCO intrinsic Josephson junction showing a good uniformity of the critical current and the number of branches is consistent with the depth where Si ions were implanted.

Original language	English
Pages (from-to)	4515-4518
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	9
Issue number	2 PART 3
DOIs	https://doi.org/10.1109/77.784029
Publication status	Published - 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "Intrinsic Josephson junctions were fabricated by silicon (Si) ion implantation into Bi-Sr-Ca-Cu-O (BSCCO) single crystals of 2212 phase grown by the traveling solvent floating zone (TSFZ) method. Si ions with the acceleration energy of SOkeV were implanted into BSCCO. Si-implanted portion of BSCCO turned to insulator and defined junctions precisely. The project range of Si into BSCCO controls thickness of intrinsic junctions. The junction exhibited a typical current-voltage characteristic of the BSCCO intrinsic Josephson junction showing a good uniformity of the critical current and the number of branches is consistent with the depth where Si ions were implanted.",

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T1 - Bi-Sr-Ca-Cu-O intrinsic josephson junctions fabricated by inhibitory ion implantation

AU - Nakajima, K.

AU - Yaraada, N.

AU - Chen, J.

AU - Yamashita, T.

AU - Watauchi, S.

AU - Tanaka,

AU - Kojima, H.

PY - 1999

Y1 - 1999

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AB - Intrinsic Josephson junctions were fabricated by silicon (Si) ion implantation into Bi-Sr-Ca-Cu-O (BSCCO) single crystals of 2212 phase grown by the traveling solvent floating zone (TSFZ) method. Si ions with the acceleration energy of SOkeV were implanted into BSCCO. Si-implanted portion of BSCCO turned to insulator and defined junctions precisely. The project range of Si into BSCCO controls thickness of intrinsic junctions. The junction exhibited a typical current-voltage characteristic of the BSCCO intrinsic Josephson junction showing a good uniformity of the critical current and the number of branches is consistent with the depth where Si ions were implanted.

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