Bi-Sr-Ca-Cu-O intrinsic josephson junctions fabricated by inhibitory ion implantation

K. Nakajima, N. Yaraada, J. Chen, T. Yamashita, S. Watauchi, Tanaka, H. Kojima

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Intrinsic Josephson junctions were fabricated by silicon (Si) ion implantation into Bi-Sr-Ca-Cu-O (BSCCO) single crystals of 2212 phase grown by the traveling solvent floating zone (TSFZ) method. Si ions with the acceleration energy of SOkeV were implanted into BSCCO. Si-implanted portion of BSCCO turned to insulator and defined junctions precisely. The project range of Si into BSCCO controls thickness of intrinsic junctions. The junction exhibited a typical current-voltage characteristic of the BSCCO intrinsic Josephson junction showing a good uniformity of the critical current and the number of branches is consistent with the depth where Si ions were implanted.

Original languageEnglish
Pages (from-to)4515-4518
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Volume9
Issue number2 PART 3
DOIs
Publication statusPublished - 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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