Abstract
Intrinsic Josephson junctions were fabricated by silicon (Si) ion implantation into Bi-Sr-Ca-Cu-O (BSCCO) single crystals of 2212 phase grown by the traveling solvent floating zone (TSFZ) method. Si ions with the acceleration energy of SOkeV were implanted into BSCCO. Si-implanted portion of BSCCO turned to insulator and defined junctions precisely. The project range of Si into BSCCO controls thickness of intrinsic junctions. The junction exhibited a typical current-voltage characteristic of the BSCCO intrinsic Josephson junction showing a good uniformity of the critical current and the number of branches is consistent with the depth where Si ions were implanted.
Original language | English |
---|---|
Pages (from-to) | 4515-4518 |
Number of pages | 4 |
Journal | IEEE Transactions on Applied Superconductivity |
Volume | 9 |
Issue number | 2 PART 3 |
DOIs | |
Publication status | Published - 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering