Bi concentration dependence of structural, ferroelectric and magnetic properties of BiFeO3 films

Hiroshi Naganuma, Tomosato Okubo, Soichiro Okamura

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Bi-rich BiFeO3 films were fabricated by chemical solution deposition followed by a post-deposition annealing at 823 K in air. Not only the polycrystalline BiFeO3 phase but also the bismuth oxide phase's were formed at high excess Bi contents. This suggested that the Bi atoms were not significantly evaporated. The remanent polarization decreased as the excess Bi contents increased at 90 K, though the remanent polarization of 33 μC/cm2 was still obtained at the excess Bi contents of 30 at.%. The magnetization monotonically decreased as the excess Bi content increased. It could be considered that the optimal Bi content is the stoichiometric value of BiFeO 3 in the preparing way of the CSD followed by the annealing at 823 K.

Original languageEnglish
Pages (from-to)234-241
Number of pages8
JournalIntegrated Ferroelectrics
Volume95
Issue number1
DOIs
Publication statusPublished - 2007
Externally publishedYes

Keywords

  • Bi
  • BiFeO film
  • Magnetic property
  • Remanent polarization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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