BF2+ ion implantation into very low temperature Si wafer

M. Takakura, T. Kinoshita, T. Uranishi, S. Miyazaki, M. Koyanag, M. Hirose

Research output: Contribution to conferencePaperpeer-review

5 Citations (Scopus)

Abstract

BF2+ ions at 30keV were implanted into silicon wafers held at -100°C or room temperature. The recrystallization process of the implanted wafers was examined by RBS and Raman scattering. The value of Xmin for wafers implanted at -100°C and annealed at 600°C is 0.05 being close to that of crystalline Si, while it is 0.08 for the room temperature implantation. The Raman spectrum for the low temperature implantation also exhibits a smaller amount of residual defects than for the room temperature implantation.

Original languageEnglish
Pages219-221
Number of pages3
Publication statusPublished - 1991 Jan 1
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 1991 Aug 271991 Aug 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

ASJC Scopus subject areas

  • Engineering(all)

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