BF2+ ions at 30keV were implanted into silicon wafers held at -100°C or room temperature. The recrystallization process of the implanted wafers was examined by RBS and Raman scattering. The value of Xmin for wafers implanted at -100°C and annealed at 600°C is 0.05 being close to that of crystalline Si, while it is 0.08 for the room temperature implantation. The Raman spectrum for the low temperature implantation also exhibits a smaller amount of residual defects than for the room temperature implantation.
|Number of pages||3|
|Publication status||Published - 1991 Jan 1|
|Event||23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn|
Duration: 1991 Aug 27 → 1991 Aug 29
|Other||23rd International Conference on Solid State Devices and Materials - SSDM '91|
|Period||91/8/27 → 91/8/29|
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