Bf^ ion implantation into very-low-temperature si wafer

Masaru Takakura, Tsuyoshi Kinoshita, Tadashi Uranishi, Seiichi Miyazaki, Mitsumasa Koyanagi, Masataka Hirose

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

BF ions at 30 keV were implanted into silicon wafers held at — 100°C or room temperature. The recrystallization process of the implanted wafers was examined by Rutherford backscattering (RBS) and Raman scattering. The value of Xm\n for wafers implanted at — 100°C and annealed at 600°C is 0.05, close to that of crystalline Si, while it is 0.08 for the room-temperature implantation. The Raman spectrum for the case of low-temperature implantation also exhibits a smaller amount of residual defects than that for the room-temperature implantation.

Original languageEnglish
Pages (from-to)3627-3629
Number of pages3
JournalJapanese journal of applied physics
Volume30
Issue number12
DOIs
Publication statusPublished - 1991 Dec

Keywords

  • BF ion
  • Low-temperature ion implantation
  • Recrystallization process
  • Rutherford backscattering
  • Shallow junction

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Takakura, M., Kinoshita, T., Uranishi, T., Miyazaki, S., Koyanagi, M., & Hirose, M. (1991). Bf^ ion implantation into very-low-temperature si wafer. Japanese journal of applied physics, 30(12), 3627-3629. https://doi.org/10.1143/JJAP.30.3627