Bend-resistance characteristics of macroscopic four-terminal devices with a high electron mobility

S. Tarucha, T. Saku, Y. Hirayama, Y. Horikoshi

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Bend-resistance characteristics are studied for four-terminal ballistic devices with a high electron mobility on a macroscopic scale of order 10 100 m. The negative bend resistance induced by ballistic electron transport is quantitatively reproduced by the Landauer-Bu ttiker formula in the classical limit for various device sizes and electron densities. Using this formula, we determine the ballistic electron length as a function of electron density, which compares well with the elastic mean free path deduced from the electron mobility and electron density.

Original languageEnglish
Pages (from-to)13465-13468
Number of pages4
JournalPhysical Review B
Volume45
Issue number23
DOIs
Publication statusPublished - 1992 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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