Behaviour of oxygen-related thermal donors in Ge crystals Czochralski-grown from the melt covered fully by B2O3

Toshinori Taishi, Yoshio Hashimoto, Hideaki Ise, Yu Murao, Takayuki Ohsawa, Yuki Tokumoto, Yutaka Ohno, Ichiro Yonenaga

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Oxygen-related thermal donors (OTDs) in oxygen-enriched Czochralski Ge crystals grown from a melt fully covered by B2O3 liquid were investigated by infrared spectroscopy. Interstitially dissolved oxygen concentrations [Oi] and thermal donor concentrations NTD in Ge specimens annealed at 350°C for 64h and at 550°C for 1h, followed by subsequent fast cooling to room temperature, were measured in comparison with those in as-grown Ge. By annealing at 350°C, an absorption peak developed at 780 cm-1 and the peak height at 855 cm-1 related to [Oi], decreased. The absorption coefficient at 780 cm-1 showed the same correlation to the difference between the total concentration of oxygen atoms and the dissolved oxygen concentration in the annealed specimens. It was found that the number of oxygen atoms forming the OTD increases with increasing annealing time at 350°C.

Original languageEnglish
Article number012011
JournalJournal of Physics: Conference Series
Volume281
Issue number1
DOIs
Publication statusPublished - 2011

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Behaviour of oxygen-related thermal donors in Ge crystals Czochralski-grown from the melt covered fully by B<sub>2</sub>O<sub>3</sub>'. Together they form a unique fingerprint.

Cite this