Behaviour of dislocations in GaAs revealed by etch pit technique and X-ray topography

Ichiro Yonenaga, K. Sumino

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)


The dynamic behaviour of α, β and screw dislocations in GaAs and the influence of various kinds of impurities on it have been investigated. Dislocation generation is strongly suppressed in a crystal doped with some kinds of impurities. The suppression of dislocation generation by impurity doping is well related to the immobilization effect of dislocations due to impurity gettering. Electrically active impurities reduce or enhance the dislocation velocities depending on both the electrical property of the impurities and the type of dislocations. The morphology of fresh dislocation loops reflects the dynamic characteristics of dislocations which are governed by the elementary process of dislocation motion.

Original languageEnglish
Pages (from-to)19-29
Number of pages11
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 1993 Jan 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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