Behaviour of dislocations in GaAs revealed by etch pit technique and X-ray topography

Ichiro Yonenaga; K. Sumino

doi:10.1016/0022-0248(93)90223-J

Behaviour of dislocations in GaAs revealed by etch pit technique and X-ray topography

Ichiro Yonenaga, K. Sumino

Materials Design Division

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

The dynamic behaviour of α, β and screw dislocations in GaAs and the influence of various kinds of impurities on it have been investigated. Dislocation generation is strongly suppressed in a crystal doped with some kinds of impurities. The suppression of dislocation generation by impurity doping is well related to the immobilization effect of dislocations due to impurity gettering. Electrically active impurities reduce or enhance the dislocation velocities depending on both the electrical property of the impurities and the type of dislocations. The morphology of fresh dislocation loops reflects the dynamic characteristics of dislocations which are governed by the elementary process of dislocation motion.

Original language	English
Pages (from-to)	19-29
Number of pages	11
Journal	Journal of Crystal Growth
Volume	126
Issue number	1
DOIs	https://doi.org/10.1016/0022-0248(93)90223-J
Publication status	Published - 1993 Jan 1

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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@article{9eb24ed6433241acb6118a3eef39a179,

title = "Behaviour of dislocations in GaAs revealed by etch pit technique and X-ray topography",

abstract = "The dynamic behaviour of α, β and screw dislocations in GaAs and the influence of various kinds of impurities on it have been investigated. Dislocation generation is strongly suppressed in a crystal doped with some kinds of impurities. The suppression of dislocation generation by impurity doping is well related to the immobilization effect of dislocations due to impurity gettering. Electrically active impurities reduce or enhance the dislocation velocities depending on both the electrical property of the impurities and the type of dislocations. The morphology of fresh dislocation loops reflects the dynamic characteristics of dislocations which are governed by the elementary process of dislocation motion.",

author = "Ichiro Yonenaga and K. Sumino",

year = "1993",

month = jan,

day = "1",

doi = "10.1016/0022-0248(93)90223-J",

language = "English",

volume = "126",

pages = "19--29",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Behaviour of dislocations in GaAs revealed by etch pit technique and X-ray topography

AU - Yonenaga, Ichiro

AU - Sumino, K.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - The dynamic behaviour of α, β and screw dislocations in GaAs and the influence of various kinds of impurities on it have been investigated. Dislocation generation is strongly suppressed in a crystal doped with some kinds of impurities. The suppression of dislocation generation by impurity doping is well related to the immobilization effect of dislocations due to impurity gettering. Electrically active impurities reduce or enhance the dislocation velocities depending on both the electrical property of the impurities and the type of dislocations. The morphology of fresh dislocation loops reflects the dynamic characteristics of dislocations which are governed by the elementary process of dislocation motion.

AB - The dynamic behaviour of α, β and screw dislocations in GaAs and the influence of various kinds of impurities on it have been investigated. Dislocation generation is strongly suppressed in a crystal doped with some kinds of impurities. The suppression of dislocation generation by impurity doping is well related to the immobilization effect of dislocations due to impurity gettering. Electrically active impurities reduce or enhance the dislocation velocities depending on both the electrical property of the impurities and the type of dislocations. The morphology of fresh dislocation loops reflects the dynamic characteristics of dislocations which are governed by the elementary process of dislocation motion.

UR - http://www.scopus.com/inward/record.url?scp=0027149144&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027149144&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(93)90223-J

DO - 10.1016/0022-0248(93)90223-J

M3 - Article

AN - SCOPUS:0027149144

VL - 126

SP - 19

EP - 29

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -