Behavior of the edge dislocation propagating along the growth direction in Czochralski Si crystal growth

Toshinori Taishi, Xinming Huang, Ichiro Yonenaga, Keigo Hoshikawa

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

The behavior of edge dislocations propagating along the growth direction, generated near the interface between the seed and the grown crystal, in Czochralski Si crystal growth is investigated. When a heavily B-doped Si crystal was grown using an undoped Si seed, edge dislocations were generated near the interface and propagated into the grown crystal orthogonally to the growth interface, but they did not multiply. However, when an undoped Si crystal was grown using a heavily B-doped Si seed, no edge dislocations propagating along the growth direction were generated in the crystal. It was found that the edge dislocations in the former case originated from the interaction of two misfit dislocations, propagating linearly in the heavily B-doped Si crystal and coming from the interface. The formation of the edge dislocations propagating along the growth direction in a Si crystal depends on both the difference in lattice constant between the seed and the grown crystal and the B concentration in the grown crystal.

Original languageEnglish
Pages (from-to)e2147-e2153
JournalJournal of Crystal Growth
Volume275
Issue number1-2
DOIs
Publication statusPublished - 2005 Feb 15

Keywords

  • A1. Edge dislocation
  • A1. Heavy B doping
  • A1. Misfit dislocation
  • A1. X-ray topography
  • A2. Czochralski method
  • B2. Semiconducting silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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