TY - JOUR
T1 - Behavior of the continuous X-ray background in grazing-exit electron probe X-ray microanalysis
AU - Tsuji, K.
AU - Spolnik, Z.
AU - Wagatsuma, K.
N1 - Funding Information:
Z. Spolnik was financially supported by the Japan Society for Promotion of Science (JSPS). We would like to thank Mr F. Sakamoto (IMR, Tohoku University) for ICP-AES measurements. Part of this work was financially supported by JSPS Grant-in-Aid (C-11650827 and B-12554030) and by the Shimadzu Science Foundation. This work was performed under the research programs (No. 234 and No. 313) at the Laboratory for Advanced Materials, Institute for Materials Research, Tohoku University. The authors appreciate Dr Nicolò Omenetto's help in improving this article.
Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2001/12/10
Y1 - 2001/12/10
N2 - The energy distribution of the background radiation originating from two kinds of substrate materials has been studied using Electron Probe X-Ray Microanalysis (EPMA) at grazing-exit angles. The different behavior between tendencies of background reduction for the silicon and the gold substrates at the grazing exit angle is explained using a critical energy concept. It is also shown experimentally that a gold substrate results in a lower background intensity than a silicon substrate in the energy region 5-7 keV, while on the other hand, for elements with X-ray lines of 2-3 keV, it is advantageous to perform the analysis when such elements are deposited on the silicon substrate.
AB - The energy distribution of the background radiation originating from two kinds of substrate materials has been studied using Electron Probe X-Ray Microanalysis (EPMA) at grazing-exit angles. The different behavior between tendencies of background reduction for the silicon and the gold substrates at the grazing exit angle is explained using a critical energy concept. It is also shown experimentally that a gold substrate results in a lower background intensity than a silicon substrate in the energy region 5-7 keV, while on the other hand, for elements with X-ray lines of 2-3 keV, it is advantageous to perform the analysis when such elements are deposited on the silicon substrate.
KW - Critical energy
KW - Grazing-exit EPMA
KW - Si and Au substrates
KW - X-Ray background behaviour
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U2 - 10.1016/S0584-8547(01)00347-0
DO - 10.1016/S0584-8547(01)00347-0
M3 - Article
AN - SCOPUS:0035841921
VL - 56
SP - 2497
EP - 2504
JO - Spectrochimica Acta - Part B Atomic Spectroscopy
JF - Spectrochimica Acta - Part B Atomic Spectroscopy
SN - 0584-8547
IS - 12
ER -