Behavior of silicon electrodepositing in fluoride molten salts

Xin Wang, Shuqiang Jiao, Komin Shu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The behavior of electrochemically depositing silicon in a molten high-melting-point fluoride electrolyte was studied at 1300°C. The cathodic product was characterized by XRD, SEM and EDS. Though the analysis of structure and composition of deposition, it could certify that silicon deposited on the Mo rod and alloyed with molybdenum. A series of tests had been performed on the cathodic behavior of Si 4+ ions in BaF 2-CaF 2-Na 2SiF 6 molten salt. The influence of electrochemical parameters on the cathodic deposition of silicon was also investigated. The electrochemical behavior of Si 4+ ions in applied fluoride melts was observed to proceed according to one-step reaction.

Original languageEnglish
Title of host publicationElectrometallurgy 2012 - Held During the TMS 2012 Annual Meeting and Exhibition
Pages119-124
Number of pages6
Publication statusPublished - 2012 May 15
Externally publishedYes
EventElectrometallurgy 2012 - TMS 2012 Annual Meeting and Exhibition - Orlando, FL, United States
Duration: 2012 Mar 112012 Mar 15

Publication series

NameTMS Annual Meeting

Other

OtherElectrometallurgy 2012 - TMS 2012 Annual Meeting and Exhibition
CountryUnited States
CityOrlando, FL
Period12/3/1112/3/15

Keywords

  • Electrochemical deposition
  • Fluoride melts
  • Silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys

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  • Cite this

    Wang, X., Jiao, S., & Shu, K. (2012). Behavior of silicon electrodepositing in fluoride molten salts. In Electrometallurgy 2012 - Held During the TMS 2012 Annual Meeting and Exhibition (pp. 119-124). (TMS Annual Meeting).