Behavior of N atoms in atomic-order nitrided Si 0.5 Ge 0.5 (1 0 0)

Nao Akiyama, Masao Sakuraba, Bernd Tillack, Junichi Murota

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Behavior of N atoms in atomic-order nitrided Si 0.5 Ge 0.5 (1 0 0) by heat treatment in Ar at 600 °C was investigated by X-ray photoelectron spectroscopy (XPS). For thermal nitridation by NH 3 at 400 °C, nitridation of surface Si atoms tends to proceed preferentially over nitridation of surface Ge atoms. It is also clear that, with the heat treatment, nitridation of Si atoms proceeds by transfer of N atoms from Ge atoms. Angle-resolved XPS results show that Ge fraction beneath the surface nitrided layer increases significantly at 600 °C compared to the initial surface. These results indicate that preferential nitridation of Si atoms at surface over Ge atoms induces Ge segregation beneath the surface nitrided layer at higher temperatures above 400 °C.

Original languageEnglish
Pages (from-to)6021-6024
Number of pages4
JournalApplied Surface Science
Volume254
Issue number19
DOIs
Publication statusPublished - 2008 Jul 30

Keywords

  • Heat treatment
  • SiGe
  • Thermal nitridation
  • X-ray photoelectron spectroscopy (XPS)

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Behavior of N atoms in atomic-order nitrided Si <sub>0.5</sub> Ge <sub>0.5</sub> (1 0 0)'. Together they form a unique fingerprint.

  • Cite this