Behavior of N atoms after thermal nitridation of Si1 - XGe x surface

Tomoyuki Kawashima, Masao Sakuraba, Bernd Tillack, Junichi Murota

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Behavior of N atoms after thermal nitridation of Si1 - xGe x (100) surface in NH3 atmosphere at 400°C was investigated. X-ray photoelectron spectroscopy (XPS) results show that N atomic amount after nitridation tends to increase with increasing Ge fraction, and amount of N atoms bonded with Ge atoms decreases by heat treatment in H 2 at 400°C. For nitrided Si0.3Ge0.7(100), the bonding between N and Si atoms forms Si3N4 structure whose amount is larger than that for nitrided Si(100). Angle-resolved XPS measurements show that there are N atoms not only at the outermost surface but also beneath surface especially in a deeper region around a few atomic layers for the nitrided Si(100), Si0.3Ge0.7(100) and Ge(100). From these results, it is suggested that penetration of N atoms through around a few atomic layers for Si, Si0.3Ge0.7 and Ge occurs during nitridation, and the N atoms for the nitrided Si0.3Ge 0.7(100) dominantly form a Si3N4 structure which stably remains even during heat treatment in H2 at 400°C.

Original languageEnglish
Pages (from-to)3392-3396
Number of pages5
JournalThin Solid Films
Volume520
Issue number8
DOIs
Publication statusPublished - 2012 Feb 1

Keywords

  • Ge
  • H
  • N
  • NH
  • Nitridation
  • Si
  • SiGe
  • X-ray Photoelectron Spectroscopy (XPS)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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