TY - JOUR
T1 - Behavior of hydride species on Si surface during methane plasma irradiation investigated by in-situ infrared spectroscopy
AU - Shinohara, Masanori
AU - Kuwano, Takayuki
AU - Kimura, Yasuo
AU - Niwano, Michio
N1 - Funding Information:
Prof. R. Hatakeyama and Mr H. Ishida are thanked for their technical help and fruitful discussion and Prof. M. Hori is also thanked for the helpful discussion. Part of this work was supported by a Grand-in-Aid for Basic Scientific Research (Grand No. 11304018) from the Ministry of Education, Science, Sports and Culture of Japan.
PY - 2003/7/1
Y1 - 2003/7/1
N2 - We have investigated the behavior of silicon- and carbon-hydride species on the hydrogen-terminated Si(100) surface, during exposure to hydrogen-diluted methane plasma at room temperature, using infrared absorption spectroscopy (IRAS) in the multiple internal reflection (MIR) geometry. We have measured IRAS spectra in the Si-H and C-H stretching vibration regions of the Si surface that was irradiated by hydrogen-diluted methane plasma. IRAS data demonstrated that at the initial stage of methane plasma exposure, atomic hydrogen and CH3 radicals stick on the H-terminated surface to increasingly generate C-substituted hydride species, and eventually one monolayer of C-containing hydride species is formed. At this stage of plasma exposure, atomic hydrogen and CH3 radicals attack the Si surfaces to create the so-called SiHn complex at sub-surface regions. A prolonged exposure to methane plasma induced an additional deposition of CHx species onto the monolayer of C-containing hydride species.
AB - We have investigated the behavior of silicon- and carbon-hydride species on the hydrogen-terminated Si(100) surface, during exposure to hydrogen-diluted methane plasma at room temperature, using infrared absorption spectroscopy (IRAS) in the multiple internal reflection (MIR) geometry. We have measured IRAS spectra in the Si-H and C-H stretching vibration regions of the Si surface that was irradiated by hydrogen-diluted methane plasma. IRAS data demonstrated that at the initial stage of methane plasma exposure, atomic hydrogen and CH3 radicals stick on the H-terminated surface to increasingly generate C-substituted hydride species, and eventually one monolayer of C-containing hydride species is formed. At this stage of plasma exposure, atomic hydrogen and CH3 radicals attack the Si surfaces to create the so-called SiHn complex at sub-surface regions. A prolonged exposure to methane plasma induced an additional deposition of CHx species onto the monolayer of C-containing hydride species.
KW - Hydride species
KW - Infrared absorption
KW - Methane plasma
KW - Si surface
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U2 - 10.1016/S0040-6090(03)00367-5
DO - 10.1016/S0040-6090(03)00367-5
M3 - Conference article
AN - SCOPUS:0038070074
VL - 435
SP - 13
EP - 18
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
T2 - Proccedings of the Joint International Plasma Symposium
Y2 - 1 July 2002 through 4 July 2002
ER -