Behavior of excess arsenic in undoped, semi-insulating gaas during ingot annealing

Maki Suemitsu, Koji Terada, Masaaki Nishijima, Nobuo Miyamoto

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Densities of EL2 and other shallower intrinsic donors in undoped, semi-insulating GaAs crystals have been investigated before and after thermal treatments using infrared absorption, nuclear-magnetic resonance, and photoluminescence measurements. After annealing for 12 h at 1100°C, EL2 showed a decrease by 25-35%, while half of this reduction was recovered by a subsequent 800°C-0.5 h annealing. The total density NXD for the shallower donors behaved quite conversely, maintaining the sum [EL2]+7VXD almost unchanged. This substantial conservation of the total donor density is understood by a rearrangement of dissolved excess arsenic atoms.

Original languageEnglish
Pages (from-to)L1654-L1656
JournalJapanese journal of applied physics
Issue number12
Publication statusPublished - 1992 Dec
Externally publishedYes


  • Deep levels
  • EL2
  • Infrared absorption
  • Ingot annealing
  • Intrinsic point defects
  • Nuclear magnetic resonance
  • Photoluminescence
  • Semi-insulating Gaas

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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