TY - JOUR
T1 - Behavior of excess arsenic in undoped, semi-insulating gaas during ingot annealing
AU - Suemitsu, Maki
AU - Terada, Koji
AU - Nishijima, Masaaki
AU - Miyamoto, Nobuo
PY - 1992/12
Y1 - 1992/12
N2 - Densities of EL2 and other shallower intrinsic donors in undoped, semi-insulating GaAs crystals have been investigated before and after thermal treatments using infrared absorption, nuclear-magnetic resonance, and photoluminescence measurements. After annealing for 12 h at 1100°C, EL2 showed a decrease by 25-35%, while half of this reduction was recovered by a subsequent 800°C-0.5 h annealing. The total density NXD for the shallower donors behaved quite conversely, maintaining the sum [EL2]+7VXD almost unchanged. This substantial conservation of the total donor density is understood by a rearrangement of dissolved excess arsenic atoms.
AB - Densities of EL2 and other shallower intrinsic donors in undoped, semi-insulating GaAs crystals have been investigated before and after thermal treatments using infrared absorption, nuclear-magnetic resonance, and photoluminescence measurements. After annealing for 12 h at 1100°C, EL2 showed a decrease by 25-35%, while half of this reduction was recovered by a subsequent 800°C-0.5 h annealing. The total density NXD for the shallower donors behaved quite conversely, maintaining the sum [EL2]+7VXD almost unchanged. This substantial conservation of the total donor density is understood by a rearrangement of dissolved excess arsenic atoms.
KW - Deep levels
KW - EL2
KW - Infrared absorption
KW - Ingot annealing
KW - Intrinsic point defects
KW - Nuclear magnetic resonance
KW - Photoluminescence
KW - Semi-insulating Gaas
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U2 - 10.1143/JJAP.31.L1654
DO - 10.1143/JJAP.31.L1654
M3 - Article
AN - SCOPUS:0026993201
VL - 31
SP - L1654-L1656
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12
ER -