Behavior of excess arsenic in undoped, semi-insulating gaas during ingot annealing

Maki Suemitsu; Koji Terada; Masaaki Nishijima; Nobuo Miyamoto

doi:10.1143/JJAP.31.L1654

Behavior of excess arsenic in undoped, semi-insulating gaas during ingot annealing

Maki Suemitsu, Koji Terada, Masaaki Nishijima, Nobuo Miyamoto

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Densities of EL2 and other shallower intrinsic donors in undoped, semi-insulating GaAs crystals have been investigated before and after thermal treatments using infrared absorption, nuclear-magnetic resonance, and photoluminescence measurements. After annealing for 12 h at 1100°C, EL2 showed a decrease by 25-35%, while half of this reduction was recovered by a subsequent 800°C-0.5 h annealing. The total density N_XD for the shallower donors behaved quite conversely, maintaining the sum [EL2]+7V_XD almost unchanged. This substantial conservation of the total donor density is understood by a rearrangement of dissolved excess arsenic atoms.

Original language	English
Pages (from-to)	L1654-L1656
Journal	Japanese journal of applied physics
Volume	31
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.31.L1654
Publication status	Published - 1992 Dec
Externally published	Yes

Keywords

Deep levels
EL2
Infrared absorption
Ingot annealing
Intrinsic point defects
Nuclear magnetic resonance
Photoluminescence
Semi-insulating Gaas

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.31.L1654

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title = "Behavior of excess arsenic in undoped, semi-insulating gaas during ingot annealing",

abstract = "Densities of EL2 and other shallower intrinsic donors in undoped, semi-insulating GaAs crystals have been investigated before and after thermal treatments using infrared absorption, nuclear-magnetic resonance, and photoluminescence measurements. After annealing for 12 h at 1100°C, EL2 showed a decrease by 25-35%, while half of this reduction was recovered by a subsequent 800°C-0.5 h annealing. The total density NXD for the shallower donors behaved quite conversely, maintaining the sum [EL2]+7VXD almost unchanged. This substantial conservation of the total donor density is understood by a rearrangement of dissolved excess arsenic atoms.",

keywords = "Deep levels, EL2, Infrared absorption, Ingot annealing, Intrinsic point defects, Nuclear magnetic resonance, Photoluminescence, Semi-insulating Gaas",

author = "Maki Suemitsu and Koji Terada and Masaaki Nishijima and Nobuo Miyamoto",

year = "1992",

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doi = "10.1143/JJAP.31.L1654",

language = "English",

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T1 - Behavior of excess arsenic in undoped, semi-insulating gaas during ingot annealing

AU - Suemitsu, Maki

AU - Terada, Koji

AU - Nishijima, Masaaki

AU - Miyamoto, Nobuo

PY - 1992/12

Y1 - 1992/12

N2 - Densities of EL2 and other shallower intrinsic donors in undoped, semi-insulating GaAs crystals have been investigated before and after thermal treatments using infrared absorption, nuclear-magnetic resonance, and photoluminescence measurements. After annealing for 12 h at 1100°C, EL2 showed a decrease by 25-35%, while half of this reduction was recovered by a subsequent 800°C-0.5 h annealing. The total density NXD for the shallower donors behaved quite conversely, maintaining the sum [EL2]+7VXD almost unchanged. This substantial conservation of the total donor density is understood by a rearrangement of dissolved excess arsenic atoms.

AB - Densities of EL2 and other shallower intrinsic donors in undoped, semi-insulating GaAs crystals have been investigated before and after thermal treatments using infrared absorption, nuclear-magnetic resonance, and photoluminescence measurements. After annealing for 12 h at 1100°C, EL2 showed a decrease by 25-35%, while half of this reduction was recovered by a subsequent 800°C-0.5 h annealing. The total density NXD for the shallower donors behaved quite conversely, maintaining the sum [EL2]+7VXD almost unchanged. This substantial conservation of the total donor density is understood by a rearrangement of dissolved excess arsenic atoms.

KW - Deep levels

KW - EL2

KW - Infrared absorption

KW - Ingot annealing

KW - Intrinsic point defects

KW - Nuclear magnetic resonance

KW - Photoluminescence

KW - Semi-insulating Gaas

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12

ER -

Behavior of excess arsenic in undoped, semi-insulating gaas during ingot annealing

Abstract

Keywords

ASJC Scopus subject areas

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