Abstract
Densities of EL2 and other shallower intrinsic donors in undoped, semi-insulating GaAs crystals have been investigated before and after thermal treatments using infrared absorption, nuclear-magnetic resonance, and photoluminescence measurements. After annealing for 12 h at 1100°C, EL2 showed a decrease by 25-35%, while half of this reduction was recovered by a subsequent 800°C-0.5 h annealing. The total density NXD for the shallower donors behaved quite conversely, maintaining the sum [EL2]+7VXD almost unchanged. This substantial conservation of the total donor density is understood by a rearrangement of dissolved excess arsenic atoms.
| Original language | English |
|---|---|
| Pages (from-to) | L1654-L1656 |
| Journal | Japanese journal of applied physics |
| Volume | 31 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1992 Dec |
Keywords
- Deep levels
- EL2
- Infrared absorption
- Ingot annealing
- Intrinsic point defects
- Nuclear magnetic resonance
- Photoluminescence
- Semi-insulating Gaas
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Suemitsu, M., Terada, K., Nishijima, M., & Miyamoto, N. (1992). Behavior of excess arsenic in undoped, semi-insulating gaas during ingot annealing. Japanese journal of applied physics, 31(12), L1654-L1656. https://doi.org/10.1143/JJAP.31.L1654