Behavior of dislocations due to thermal shock in B-doped Si seed in Czochralski Si crystal growth

Toshinori Taishi, Xinming Huang, Tiefeng Wang, Ichiro Yonenaga, Keigo Hoshikawa

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Behavior of dislocations due to thermal shock in heavily B-doped Si seeds in Czochralski (CZ) Si crystal growth has been investigated. Dislocations due to thermal shock formed in a seed of 7 × 7 mm2 cross-section with a B concentration of 3 × 1018 atoms/cm3 when the seed was simply dipped in Si melt. However, dislocations disappeared when the seed was intentionally melted back in melt after initial dipping. We concluded that some dislocations which were formed in a Si seed just above the crystal-melt interface disappeared when the seed was intentionally melted back at a melting rate exceeding the dislocation propagation velocity, which decreased with increasing B concentration in Si seed.

Original languageEnglish
Pages (from-to)277-282
Number of pages6
JournalJournal of Crystal Growth
Volume241
Issue number3
DOIs
Publication statusPublished - 2002 Jun

Keywords

  • A1. Doping
  • A1. X-ray topography
  • A2. Czochralski method
  • A2. Seed crystals
  • A2. Single crystal growth
  • B2. Semiconducting silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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