TY - JOUR
T1 - Behavior of dislocations due to thermal shock in B-doped Si seed in Czochralski Si crystal growth
AU - Taishi, Toshinori
AU - Huang, Xinming
AU - Wang, Tiefeng
AU - Yonenaga, Ichiro
AU - Hoshikawa, Keigo
N1 - Funding Information:
This work was supported by JSPS Research for the Venture SME-University Research Promotion Program. This work was also supported in part by Grants-in-Aid for Scientific Research (13450010) from the Ministry of Education, Science, Sports and Culture.
PY - 2002/6
Y1 - 2002/6
N2 - Behavior of dislocations due to thermal shock in heavily B-doped Si seeds in Czochralski (CZ) Si crystal growth has been investigated. Dislocations due to thermal shock formed in a seed of 7 × 7 mm2 cross-section with a B concentration of 3 × 1018 atoms/cm3 when the seed was simply dipped in Si melt. However, dislocations disappeared when the seed was intentionally melted back in melt after initial dipping. We concluded that some dislocations which were formed in a Si seed just above the crystal-melt interface disappeared when the seed was intentionally melted back at a melting rate exceeding the dislocation propagation velocity, which decreased with increasing B concentration in Si seed.
AB - Behavior of dislocations due to thermal shock in heavily B-doped Si seeds in Czochralski (CZ) Si crystal growth has been investigated. Dislocations due to thermal shock formed in a seed of 7 × 7 mm2 cross-section with a B concentration of 3 × 1018 atoms/cm3 when the seed was simply dipped in Si melt. However, dislocations disappeared when the seed was intentionally melted back in melt after initial dipping. We concluded that some dislocations which were formed in a Si seed just above the crystal-melt interface disappeared when the seed was intentionally melted back at a melting rate exceeding the dislocation propagation velocity, which decreased with increasing B concentration in Si seed.
KW - A1. Doping
KW - A1. X-ray topography
KW - A2. Czochralski method
KW - A2. Seed crystals
KW - A2. Single crystal growth
KW - B2. Semiconducting silicon
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U2 - 10.1016/S0022-0248(02)01246-0
DO - 10.1016/S0022-0248(02)01246-0
M3 - Article
AN - SCOPUS:0036606510
VL - 241
SP - 277
EP - 282
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3
ER -