Behavior of dislocations due to thermal shock in B-doped Si seed in Czochralski Si crystal growth

Toshinori Taishi; Xinming Huang; Tiefeng Wang; Ichiro Yonenaga; Keigo Hoshikawa

doi:10.1016/S0022-0248(02)01246-0

Behavior of dislocations due to thermal shock in B-doped Si seed in Czochralski Si crystal growth

Toshinori Taishi, Xinming Huang, Tiefeng Wang, Ichiro Yonenaga, Keigo Hoshikawa

Materials Design Division

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Behavior of dislocations due to thermal shock in heavily B-doped Si seeds in Czochralski (CZ) Si crystal growth has been investigated. Dislocations due to thermal shock formed in a seed of 7 × 7 mm² cross-section with a B concentration of 3 × 10¹⁸ atoms/cm³ when the seed was simply dipped in Si melt. However, dislocations disappeared when the seed was intentionally melted back in melt after initial dipping. We concluded that some dislocations which were formed in a Si seed just above the crystal-melt interface disappeared when the seed was intentionally melted back at a melting rate exceeding the dislocation propagation velocity, which decreased with increasing B concentration in Si seed.

Original language	English
Pages (from-to)	277-282
Number of pages	6
Journal	Journal of Crystal Growth
Volume	241
Issue number	3
DOIs	https://doi.org/10.1016/S0022-0248(02)01246-0
Publication status	Published - 2002 Jun

Keywords

A1. Doping
A1. X-ray topography
A2. Czochralski method
A2. Seed crystals
A2. Single crystal growth
B2. Semiconducting silicon

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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@article{73981eb801534668b4fa9450b78e7d46,

title = "Behavior of dislocations due to thermal shock in B-doped Si seed in Czochralski Si crystal growth",

abstract = "Behavior of dislocations due to thermal shock in heavily B-doped Si seeds in Czochralski (CZ) Si crystal growth has been investigated. Dislocations due to thermal shock formed in a seed of 7 × 7 mm2 cross-section with a B concentration of 3 × 1018 atoms/cm3 when the seed was simply dipped in Si melt. However, dislocations disappeared when the seed was intentionally melted back in melt after initial dipping. We concluded that some dislocations which were formed in a Si seed just above the crystal-melt interface disappeared when the seed was intentionally melted back at a melting rate exceeding the dislocation propagation velocity, which decreased with increasing B concentration in Si seed.",

keywords = "A1. Doping, A1. X-ray topography, A2. Czochralski method, A2. Seed crystals, A2. Single crystal growth, B2. Semiconducting silicon",

author = "Toshinori Taishi and Xinming Huang and Tiefeng Wang and Ichiro Yonenaga and Keigo Hoshikawa",

note = "Funding Information: This work was supported by JSPS Research for the Venture SME-University Research Promotion Program. This work was also supported in part by Grants-in-Aid for Scientific Research (13450010) from the Ministry of Education, Science, Sports and Culture.",

year = "2002",

month = jun,

doi = "10.1016/S0022-0248(02)01246-0",

language = "English",

volume = "241",

pages = "277--282",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Behavior of dislocations due to thermal shock in B-doped Si seed in Czochralski Si crystal growth

AU - Taishi, Toshinori

AU - Huang, Xinming

AU - Wang, Tiefeng

AU - Yonenaga, Ichiro

AU - Hoshikawa, Keigo

N1 - Funding Information: This work was supported by JSPS Research for the Venture SME-University Research Promotion Program. This work was also supported in part by Grants-in-Aid for Scientific Research (13450010) from the Ministry of Education, Science, Sports and Culture.

PY - 2002/6

Y1 - 2002/6

N2 - Behavior of dislocations due to thermal shock in heavily B-doped Si seeds in Czochralski (CZ) Si crystal growth has been investigated. Dislocations due to thermal shock formed in a seed of 7 × 7 mm2 cross-section with a B concentration of 3 × 1018 atoms/cm3 when the seed was simply dipped in Si melt. However, dislocations disappeared when the seed was intentionally melted back in melt after initial dipping. We concluded that some dislocations which were formed in a Si seed just above the crystal-melt interface disappeared when the seed was intentionally melted back at a melting rate exceeding the dislocation propagation velocity, which decreased with increasing B concentration in Si seed.

AB - Behavior of dislocations due to thermal shock in heavily B-doped Si seeds in Czochralski (CZ) Si crystal growth has been investigated. Dislocations due to thermal shock formed in a seed of 7 × 7 mm2 cross-section with a B concentration of 3 × 1018 atoms/cm3 when the seed was simply dipped in Si melt. However, dislocations disappeared when the seed was intentionally melted back in melt after initial dipping. We concluded that some dislocations which were formed in a Si seed just above the crystal-melt interface disappeared when the seed was intentionally melted back at a melting rate exceeding the dislocation propagation velocity, which decreased with increasing B concentration in Si seed.

KW - A1. Doping

KW - A1. X-ray topography

KW - A2. Czochralski method

KW - A2. Seed crystals

KW - A2. Single crystal growth

KW - B2. Semiconducting silicon

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U2 - 10.1016/S0022-0248(02)01246-0

DO - 10.1016/S0022-0248(02)01246-0

M3 - Article

AN - SCOPUS:0036606510

VL - 241

SP - 277

EP - 282

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3

ER -