Behavior of dislocations due to thermal shock and critical shear stress of Si in Czochralski crystal growth

Toshinori Taishi; Keigo Hoshikawa; Yutaka Ohno; Ichiro Yonenaga

doi:10.1016/j.physb.2009.08.137

Behavior of dislocations due to thermal shock and critical shear stress of Si in Czochralski crystal growth

Toshinori Taishi, Keigo Hoshikawa, Yutaka Ohno, Ichiro Yonenaga

Materials Design Division

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Generation of dislocations due to thermal shock in Czochralski (CZ) Si crystal growth under different dipping temperature is investigated. Generation of dislocations due to thermal shock could be suppressed by using a heavily B-doped CZ-Si seed, and the ability for such suppression increased with increasing B concentration in the seed. However, dislocations were generated when the temperature difference before and after the dipping of which a seed was sustained became large. Critical shear stress of B-doped Si crystal with a B concentration of 3×10¹⁸ cm^-3 at the melting point of Si was estimated to be around 4 MPa.

Original language	English
Pages (from-to)	4612-4615
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	404
Issue number	23-24
DOIs	https://doi.org/10.1016/j.physb.2009.08.137
Publication status	Published - 2009 Dec 15

Keywords

B concentration
Critical shear stress
Dislocation due to thermal shock
Melting temperature of Si
Si crystal growth

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2009.08.137

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title = "Behavior of dislocations due to thermal shock and critical shear stress of Si in Czochralski crystal growth",

abstract = "Generation of dislocations due to thermal shock in Czochralski (CZ) Si crystal growth under different dipping temperature is investigated. Generation of dislocations due to thermal shock could be suppressed by using a heavily B-doped CZ-Si seed, and the ability for such suppression increased with increasing B concentration in the seed. However, dislocations were generated when the temperature difference before and after the dipping of which a seed was sustained became large. Critical shear stress of B-doped Si crystal with a B concentration of 3×1018 cm-3 at the melting point of Si was estimated to be around 4 MPa.",

keywords = "B concentration, Critical shear stress, Dislocation due to thermal shock, Melting temperature of Si, Si crystal growth",

author = "Toshinori Taishi and Keigo Hoshikawa and Yutaka Ohno and Ichiro Yonenaga",

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T1 - Behavior of dislocations due to thermal shock and critical shear stress of Si in Czochralski crystal growth

AU - Taishi, Toshinori

AU - Hoshikawa, Keigo

AU - Ohno, Yutaka

AU - Yonenaga, Ichiro

PY - 2009/12/15

Y1 - 2009/12/15

N2 - Generation of dislocations due to thermal shock in Czochralski (CZ) Si crystal growth under different dipping temperature is investigated. Generation of dislocations due to thermal shock could be suppressed by using a heavily B-doped CZ-Si seed, and the ability for such suppression increased with increasing B concentration in the seed. However, dislocations were generated when the temperature difference before and after the dipping of which a seed was sustained became large. Critical shear stress of B-doped Si crystal with a B concentration of 3×1018 cm-3 at the melting point of Si was estimated to be around 4 MPa.

AB - Generation of dislocations due to thermal shock in Czochralski (CZ) Si crystal growth under different dipping temperature is investigated. Generation of dislocations due to thermal shock could be suppressed by using a heavily B-doped CZ-Si seed, and the ability for such suppression increased with increasing B concentration in the seed. However, dislocations were generated when the temperature difference before and after the dipping of which a seed was sustained became large. Critical shear stress of B-doped Si crystal with a B concentration of 3×1018 cm-3 at the melting point of Si was estimated to be around 4 MPa.

KW - B concentration

KW - Critical shear stress

KW - Dislocation due to thermal shock

KW - Melting temperature of Si

KW - Si crystal growth

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JO - Physica B: Condensed Matter

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ER -

Behavior of dislocations due to thermal shock and critical shear stress of Si in Czochralski crystal growth

Abstract

Keywords

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