Behavior of dislocations due to thermal shock and critical shear stress of Si in Czochralski crystal growth

Toshinori Taishi, Keigo Hoshikawa, Yutaka Ohno, Ichiro Yonenaga

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Generation of dislocations due to thermal shock in Czochralski (CZ) Si crystal growth under different dipping temperature is investigated. Generation of dislocations due to thermal shock could be suppressed by using a heavily B-doped CZ-Si seed, and the ability for such suppression increased with increasing B concentration in the seed. However, dislocations were generated when the temperature difference before and after the dipping of which a seed was sustained became large. Critical shear stress of B-doped Si crystal with a B concentration of 3×1018 cm-3 at the melting point of Si was estimated to be around 4 MPa.

Original languageEnglish
Pages (from-to)4612-4615
Number of pages4
JournalPhysica B: Condensed Matter
Volume404
Issue number23-24
DOIs
Publication statusPublished - 2009 Dec 15

Keywords

  • B concentration
  • Critical shear stress
  • Dislocation due to thermal shock
  • Melting temperature of Si
  • Si crystal growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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