Be doping in molecular layer epitaxy of GaAs

Yutaka Oyama, Takeo Ohno, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journalConference articlepeer-review


Be-doped p+-GaAs epitaxial thin layers were grown on {0 0 1} GaAs substrates by molecular layer epitaxy using an intermittent supply of AsH3 and triethylgallium (TEG) in an ultra high vacuum. Bismethylcyclopentadienyl-beryllium [Be(MeCp)2] was used as the source gas for acceptor doping. The surface stoichiometry was controlled by changing the gas supply sequences and supply time before the introduction of the impurity precursor. It was shown that the incorporation of Be is extremely enhanced when the layer is exposed to Be(MeCp)2 after TEG supply. Doping characteristics in GaAs:Be layer have shown strong dependences on surface stoichiometry.

Original languageEnglish
Pages (from-to)e1079-e1083
JournalJournal of Crystal Growth
Issue number1-2
Publication statusPublished - 2005 Feb 15


  • A1. Doping
  • A1. Impurities
  • A1. Surfaces
  • A1. X-ray diffraction
  • A3. Atomic layer epitaxy
  • B2. Semiconducting gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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