Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vacuum

Yutaka Oyama, Takeo Ohno, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Be-doped p+-GaAs epitaxial thin layers were grown on (001)-oriented GaAs substrates by intermittent supply of arsine, triethylgallium and Bismethylcyclopentadienyl-beryllium [Be(MeCp)2] in an ultra-high vacuum at low growth temperature 260-375°C. By changing the gas injection sequences and supply time, the surface stoichiometry before the introduction of impurity precursor is controlled. Heavily Be-doped p +-GaAs grown at 290°C shows high carrier concentration up to 8×1019cm-3 with Hall mobility of 42cm 2V-1s-1 at nominal room temperature. It is shown that the incorporation of Be is extremely enhanced when Be(MeCp) 2 is exposed on the gallium-stabilized surface. In view of the surface stoichiometry control, Be doping mechanism is discussed on the basis of rate law of surface chemical reactions.

Original languageEnglish
Pages (from-to)61-68
Number of pages8
JournalJournal of Crystal Growth
Issue number1-2
Publication statusPublished - 2003 Nov 1


  • A1. Doping
  • A1. Impurities
  • A1. Surface processes
  • A3. Atomic layer epitaxy
  • B1. Gallium compounds
  • B2. Semiconducting gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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