Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vacuum

Yutaka Oyama; Takeo Ohno; Ken Suto; Jun Ichi Nishizawa

doi:10.1016/S0022-0248(03)01585-9

Be doping in GaAs by intermittent AsH₃/TEG supply in an ultra-high vacuum

Yutaka Oyama, Takeo Ohno, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Be-doped p⁺-GaAs epitaxial thin layers were grown on (001)-oriented GaAs substrates by intermittent supply of arsine, triethylgallium and Bismethylcyclopentadienyl-beryllium [Be(MeCp)₂] in an ultra-high vacuum at low growth temperature 260-375°C. By changing the gas injection sequences and supply time, the surface stoichiometry before the introduction of impurity precursor is controlled. Heavily Be-doped p ⁺-GaAs grown at 290°C shows high carrier concentration up to 8×10¹⁹cm^-3 with Hall mobility of 42cm ²V^-1s^-1 at nominal room temperature. It is shown that the incorporation of Be is extremely enhanced when Be(MeCp) ₂ is exposed on the gallium-stabilized surface. In view of the surface stoichiometry control, Be doping mechanism is discussed on the basis of rate law of surface chemical reactions.

Original language	English
Pages (from-to)	61-68
Number of pages	8
Journal	Journal of Crystal Growth
Volume	259
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(03)01585-9
Publication status	Published - 2003 Nov 1

Keywords

A1. Doping
A1. Impurities
A1. Surface processes
A3. Atomic layer epitaxy
B1. Gallium compounds
B2. Semiconducting gallium arsenide

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vacuum",

abstract = "Be-doped p+-GaAs epitaxial thin layers were grown on (001)-oriented GaAs substrates by intermittent supply of arsine, triethylgallium and Bismethylcyclopentadienyl-beryllium [Be(MeCp)2] in an ultra-high vacuum at low growth temperature 260-375°C. By changing the gas injection sequences and supply time, the surface stoichiometry before the introduction of impurity precursor is controlled. Heavily Be-doped p +-GaAs grown at 290°C shows high carrier concentration up to 8×1019cm-3 with Hall mobility of 42cm 2V-1s-1 at nominal room temperature. It is shown that the incorporation of Be is extremely enhanced when Be(MeCp) 2 is exposed on the gallium-stabilized surface. In view of the surface stoichiometry control, Be doping mechanism is discussed on the basis of rate law of surface chemical reactions.",

keywords = "A1. Doping, A1. Impurities, A1. Surface processes, A3. Atomic layer epitaxy, B1. Gallium compounds, B2. Semiconducting gallium arsenide",

author = "Yutaka Oyama and Takeo Ohno and Ken Suto and Nishizawa, {Jun Ichi}",

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T1 - Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vacuum

AU - Oyama, Yutaka

AU - Ohno, Takeo

AU - Suto, Ken

AU - Nishizawa, Jun Ichi

PY - 2003/11/1

Y1 - 2003/11/1

N2 - Be-doped p+-GaAs epitaxial thin layers were grown on (001)-oriented GaAs substrates by intermittent supply of arsine, triethylgallium and Bismethylcyclopentadienyl-beryllium [Be(MeCp)2] in an ultra-high vacuum at low growth temperature 260-375°C. By changing the gas injection sequences and supply time, the surface stoichiometry before the introduction of impurity precursor is controlled. Heavily Be-doped p +-GaAs grown at 290°C shows high carrier concentration up to 8×1019cm-3 with Hall mobility of 42cm 2V-1s-1 at nominal room temperature. It is shown that the incorporation of Be is extremely enhanced when Be(MeCp) 2 is exposed on the gallium-stabilized surface. In view of the surface stoichiometry control, Be doping mechanism is discussed on the basis of rate law of surface chemical reactions.

AB - Be-doped p+-GaAs epitaxial thin layers were grown on (001)-oriented GaAs substrates by intermittent supply of arsine, triethylgallium and Bismethylcyclopentadienyl-beryllium [Be(MeCp)2] in an ultra-high vacuum at low growth temperature 260-375°C. By changing the gas injection sequences and supply time, the surface stoichiometry before the introduction of impurity precursor is controlled. Heavily Be-doped p +-GaAs grown at 290°C shows high carrier concentration up to 8×1019cm-3 with Hall mobility of 42cm 2V-1s-1 at nominal room temperature. It is shown that the incorporation of Be is extremely enhanced when Be(MeCp) 2 is exposed on the gallium-stabilized surface. In view of the surface stoichiometry control, Be doping mechanism is discussed on the basis of rate law of surface chemical reactions.

KW - A1. Doping

KW - A1. Impurities

KW - A1. Surface processes

KW - A3. Atomic layer epitaxy

KW - B1. Gallium compounds

KW - B2. Semiconducting gallium arsenide

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U2 - 10.1016/S0022-0248(03)01585-9

DO - 10.1016/S0022-0248(03)01585-9

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VL - 259

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EP - 68

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

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