Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vacuum

Yutaka Oyama; Takeo Ohno; Ken Suto; Jun Ichi Nishizawa

doi:10.1016/S0022-0248(03)01585-9

Be doping in GaAs by intermittent AsH₃/TEG supply in an ultra-high vacuum

Yutaka Oyama, Takeo Ohno, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Be-doped p⁺-GaAs epitaxial thin layers were grown on (001)-oriented GaAs substrates by intermittent supply of arsine, triethylgallium and Bismethylcyclopentadienyl-beryllium [Be(MeCp)₂] in an ultra-high vacuum at low growth temperature 260-375°C. By changing the gas injection sequences and supply time, the surface stoichiometry before the introduction of impurity precursor is controlled. Heavily Be-doped p ⁺-GaAs grown at 290°C shows high carrier concentration up to 8×10¹⁹cm^-3 with Hall mobility of 42cm ²V^-1s^-1 at nominal room temperature. It is shown that the incorporation of Be is extremely enhanced when Be(MeCp) ₂ is exposed on the gallium-stabilized surface. In view of the surface stoichiometry control, Be doping mechanism is discussed on the basis of rate law of surface chemical reactions.

Original language	English
Pages (from-to)	61-68
Number of pages	8
Journal	Journal of Crystal Growth
Volume	259
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(03)01585-9
Publication status	Published - 2003 Nov 1

Keywords

A1. Doping
A1. Impurities
A1. Surface processes
A3. Atomic layer epitaxy
B1. Gallium compounds
B2. Semiconducting gallium arsenide

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(03)01585-9

Cite this

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title = "Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vacuum",

abstract = "Be-doped p+-GaAs epitaxial thin layers were grown on (001)-oriented GaAs substrates by intermittent supply of arsine, triethylgallium and Bismethylcyclopentadienyl-beryllium [Be(MeCp)2] in an ultra-high vacuum at low growth temperature 260-375°C. By changing the gas injection sequences and supply time, the surface stoichiometry before the introduction of impurity precursor is controlled. Heavily Be-doped p +-GaAs grown at 290°C shows high carrier concentration up to 8×1019cm-3 with Hall mobility of 42cm 2V-1s-1 at nominal room temperature. It is shown that the incorporation of Be is extremely enhanced when Be(MeCp) 2 is exposed on the gallium-stabilized surface. In view of the surface stoichiometry control, Be doping mechanism is discussed on the basis of rate law of surface chemical reactions.",

keywords = "A1. Doping, A1. Impurities, A1. Surface processes, A3. Atomic layer epitaxy, B1. Gallium compounds, B2. Semiconducting gallium arsenide",

author = "Yutaka Oyama and Takeo Ohno and Ken Suto and Nishizawa, {Jun Ichi}",

year = "2003",

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T1 - Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vacuum

AU - Oyama, Yutaka

AU - Ohno, Takeo

AU - Suto, Ken

AU - Nishizawa, Jun Ichi

PY - 2003/11/1

Y1 - 2003/11/1

N2 - Be-doped p+-GaAs epitaxial thin layers were grown on (001)-oriented GaAs substrates by intermittent supply of arsine, triethylgallium and Bismethylcyclopentadienyl-beryllium [Be(MeCp)2] in an ultra-high vacuum at low growth temperature 260-375°C. By changing the gas injection sequences and supply time, the surface stoichiometry before the introduction of impurity precursor is controlled. Heavily Be-doped p +-GaAs grown at 290°C shows high carrier concentration up to 8×1019cm-3 with Hall mobility of 42cm 2V-1s-1 at nominal room temperature. It is shown that the incorporation of Be is extremely enhanced when Be(MeCp) 2 is exposed on the gallium-stabilized surface. In view of the surface stoichiometry control, Be doping mechanism is discussed on the basis of rate law of surface chemical reactions.

AB - Be-doped p+-GaAs epitaxial thin layers were grown on (001)-oriented GaAs substrates by intermittent supply of arsine, triethylgallium and Bismethylcyclopentadienyl-beryllium [Be(MeCp)2] in an ultra-high vacuum at low growth temperature 260-375°C. By changing the gas injection sequences and supply time, the surface stoichiometry before the introduction of impurity precursor is controlled. Heavily Be-doped p +-GaAs grown at 290°C shows high carrier concentration up to 8×1019cm-3 with Hall mobility of 42cm 2V-1s-1 at nominal room temperature. It is shown that the incorporation of Be is extremely enhanced when Be(MeCp) 2 is exposed on the gallium-stabilized surface. In view of the surface stoichiometry control, Be doping mechanism is discussed on the basis of rate law of surface chemical reactions.

KW - A1. Doping

KW - A1. Impurities

KW - A1. Surface processes

KW - A3. Atomic layer epitaxy

KW - B1. Gallium compounds

KW - B2. Semiconducting gallium arsenide

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U2 - 10.1016/S0022-0248(03)01585-9

DO - 10.1016/S0022-0248(03)01585-9

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VL - 259

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EP - 68

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

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