Abstract
Be-doped p+-GaAs epitaxial thin layers were grown on (001)-oriented GaAs substrates by intermittent supply of arsine, triethylgallium and Bismethylcyclopentadienyl-beryllium [Be(MeCp)2] in an ultra-high vacuum at low growth temperature 260-375°C. By changing the gas injection sequences and supply time, the surface stoichiometry before the introduction of impurity precursor is controlled. Heavily Be-doped p +-GaAs grown at 290°C shows high carrier concentration up to 8×1019cm-3 with Hall mobility of 42cm 2V-1s-1 at nominal room temperature. It is shown that the incorporation of Be is extremely enhanced when Be(MeCp) 2 is exposed on the gallium-stabilized surface. In view of the surface stoichiometry control, Be doping mechanism is discussed on the basis of rate law of surface chemical reactions.
Original language | English |
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Pages (from-to) | 61-68 |
Number of pages | 8 |
Journal | Journal of Crystal Growth |
Volume | 259 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 2003 Nov 1 |
Keywords
- A1. Doping
- A1. Impurities
- A1. Surface processes
- A3. Atomic layer epitaxy
- B1. Gallium compounds
- B2. Semiconducting gallium arsenide
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry