BaTi0.91(Hf0.5Zr0.5)0.09O 3 thin films prepared by Nd3+: YAG (λ = 266 nm) laser ablation

Yoichiro Masuda, Shigetaka Fujita, Akira Baba, Hiroshi Masumoto, Toshio Hirai, Kunihiro Nagata

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2 Citations (Scopus)

Abstract

We have demonstrated synthesis of BaTi(Hf0.5Zr0.5)O3 (BTHZ) thin films using the fourth harmonic wave of a pulsed YAG (FHG-YAG) laser, for the first time. The BTHZ thin films with a preferred orientation in the c-axis are successfully synthesized and can be carried out under an oxygen gas pressure of 3 Pa at 800°C. Crystallinity of the deposited films seems to depend on the distance between atoms of each element.

Original languageEnglish
Pages (from-to)S1372-S1374
JournalJournal of the Korean Physical Society
Volume32
Issue number4 SUPPL.
Publication statusPublished - 1998 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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