BaTi0.91(Hf0.5Zr0.5)0.09O 3 thin films prepared by Nd3+: YAG (λ = 266 nm) laser ablation

Yoichiro Masuda; Shigetaka Fujita; Akira Baba; Hiroshi Masumoto; Toshio Hirai; Kunihiro Nagata

BaTi_0.91(Hf_0.5Zr_0.5)_0.09O ₃ thin films prepared by Nd³⁺: YAG (λ = 266 nm) laser ablation

Yoichiro Masuda, Shigetaka Fujita, Akira Baba, Hiroshi Masumoto, Toshio Hirai, Kunihiro Nagata

Advanced Interdisciplinary Research Division

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We have demonstrated synthesis of BaTi(Hf_0.5Zr_0.5)O₃ (BTHZ) thin films using the fourth harmonic wave of a pulsed YAG (FHG-YAG) laser, for the first time. The BTHZ thin films with a preferred orientation in the c-axis are successfully synthesized and can be carried out under an oxygen gas pressure of 3 Pa at 800°C. Crystallinity of the deposited films seems to depend on the distance between atoms of each element.

Original language	English
Pages (from-to)	S1372-S1374
Journal	Journal of the Korean Physical Society
Volume	32
Issue number	4 SUPPL.
Publication status	Published - 1998 Dec 1

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

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title = "BaTi0.91(Hf0.5Zr0.5)0.09O 3 thin films prepared by Nd3+: YAG (λ = 266 nm) laser ablation",

abstract = "We have demonstrated synthesis of BaTi(Hf0.5Zr0.5)O3 (BTHZ) thin films using the fourth harmonic wave of a pulsed YAG (FHG-YAG) laser, for the first time. The BTHZ thin films with a preferred orientation in the c-axis are successfully synthesized and can be carried out under an oxygen gas pressure of 3 Pa at 800°C. Crystallinity of the deposited films seems to depend on the distance between atoms of each element.",

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year = "1998",

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T1 - BaTi0.91(Hf0.5Zr0.5)0.09O 3 thin films prepared by Nd3+

T2 - YAG (λ = 266 nm) laser ablation

AU - Masuda, Yoichiro

AU - Fujita, Shigetaka

AU - Baba, Akira

AU - Masumoto, Hiroshi

AU - Hirai, Toshio

AU - Nagata, Kunihiro

PY - 1998/12/1

Y1 - 1998/12/1

N2 - We have demonstrated synthesis of BaTi(Hf0.5Zr0.5)O3 (BTHZ) thin films using the fourth harmonic wave of a pulsed YAG (FHG-YAG) laser, for the first time. The BTHZ thin films with a preferred orientation in the c-axis are successfully synthesized and can be carried out under an oxygen gas pressure of 3 Pa at 800°C. Crystallinity of the deposited films seems to depend on the distance between atoms of each element.

AB - We have demonstrated synthesis of BaTi(Hf0.5Zr0.5)O3 (BTHZ) thin films using the fourth harmonic wave of a pulsed YAG (FHG-YAG) laser, for the first time. The BTHZ thin films with a preferred orientation in the c-axis are successfully synthesized and can be carried out under an oxygen gas pressure of 3 Pa at 800°C. Crystallinity of the deposited films seems to depend on the distance between atoms of each element.

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VL - 32

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JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 4 SUPPL.

ER -

BaTi_0.91(Hf_0.5Zr_0.5)_0.09O ₃ thin films prepared by Nd³⁺: YAG (λ = 266 nm) laser ablation

Abstract

ASJC Scopus subject areas

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