Barrier properties of CVD Mn oxide layer to Cu diffusion for 3-D TSV

Kang Wook Lee, Hao Wang, Ji Cheol Bea, Mariappan Murugesan, Yuji Sutou, Takafumi Fukushima, Tetsu Tanaka, Junichi Koike, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

The effect of CVD Mn oxide layer as a barrier layer to Cu diffusion for 3-D TSV was characterized. The impact of oxide substrate on the barrier property of a planar Mn oxide was evaluated by XPS method. Planar Mn oxide layer of 20-nm thickness formed over thermal oxide showed an excellent barrier property to Cu diffusion after annealing at 500 °C, whereas the Mn oxide over P-TEOS oxide was good enough up to 400 °C annealing. On the other hand, the barrier property of Mn oxide upon O3-TEOS oxide was not as good as thermal and P-TEOS oxides. The effect of a vertical Mn oxide layer as a barrier layer to Cu diffusion from Cu TSV was evaluated by C-t analysis. Vertical Mn oxide layer with 20-nm thickness formed on P-TEOS oxide liner in TSV showed better barrier property, when compared with the sputtered Ta barrier layer, up to 400 °C annealing condition. However, the barrier property of CVD Mn oxide layer was degraded after annealing at 500 °C.

Original languageEnglish
Article number6690165
Pages (from-to)114-116
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number1
DOIs
Publication statusPublished - 2014 Jan

Keywords

  • CVD Mn oxide
  • Cu TSV
  • Cu diffusion
  • barrier layer
  • capacitance-time (C-t)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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