Barrier inhomogeneities at vertically stacked graphene-based heterostructures

Yen Fu Lin, Wenwu Li, Song Lin Li, Yong Xu, Alex Aparecido-Ferreira, Katsuyoshi Komatsu, Huabin Sun, Shu Nakaharai, Kazuhito Tsukagoshi

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47 Citations (Scopus)

Abstract

The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. The temperature dependence of the electrical characteristics was investigated from 300 to 90 K. In a careful analysis of current-voltage characteristics, an unusual decrease in the effective Schottky barrier height and increase in the ideality factor were observed with decreasing temperature. A model of thermionic emission with a Gaussian distribution of barriers was able to precisely interpret the conduction mechanism. Furthermore, mapping of the effective Schottky barrier height is unmasked as a function of temperature and gate voltage. The results offer significant insight for the development of future layer-integration technology based on graphene-based heterostructures.

Original languageEnglish
Pages (from-to)795-799
Number of pages5
JournalNanoscale
Volume6
Issue number2
DOIs
Publication statusPublished - 2014 Jan 21
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)

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  • Cite this

    Lin, Y. F., Li, W., Li, S. L., Xu, Y., Aparecido-Ferreira, A., Komatsu, K., Sun, H., Nakaharai, S., & Tsukagoshi, K. (2014). Barrier inhomogeneities at vertically stacked graphene-based heterostructures. Nanoscale, 6(2), 795-799. https://doi.org/10.1039/c3nr03677d