Barrier engineering of lattice matched alingan/ gan heterostructure toward high performance e-mode operation

Niraj Man Shrestha; Chao Hsuan Chen; Zuo Min Tsai; Yiming Li; Jenn Hawn Tarng; Seiji Samukawa

doi:10.1109/SISPAD.2019.8870407

Barrier engineering of lattice matched alingan/ gan heterostructure toward high performance e-mode operation

Niraj Man Shrestha, Chao Hsuan Chen, Zuo Min Tsai, Yiming Li, Jenn Hawn Tarng, Seiji Samukawa

Innovative Energy Research Center

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electrical characteristics of lattice matched AlInGaN/GaN high electron mobility transistors with different barrier engineering was studied theoretically by solving drift diffusion equation. The results of the study thoroughly disclose the mitigation of induced polarization charge on lowering Al and In content in barrier resulting in a positive shift of threshold voltage with huge deduction on drain current. The newly designed lattice match double A1_0.54 In_0.12 Ga_0.34 N/ Al_0.18 In_0.04 Ga_0.78 N barrier recess gate HEMT helps to boost the drain current by reducing the access resistance and enhancing the polarization charge density. The proposed HEMT exalted current density and transconductance by two times with significant shift of threshold voltage in positive axis than that of single barrier structure. Conclusively, the high performance novel double barrier recess gate E-mode HEMT will be key for real and efficient high power switching application.

Original language	English
Title of host publication	Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
Editors	Francesco Driussi
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728109404
DOIs	https://doi.org/10.1109/SISPAD.2019.8870407
Publication status	Published - 2019 Sep
Event	24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 - Udine, Italy Duration: 2019 Sep 4 → 2019 Sep 6

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2019-September

Conference

Conference	24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
Country	Italy
City	Udine
Period	19/9/4 → 19/9/6

Keywords

AlInGaN/GaN HEMT
Double barrier
Drift diffusion
Physical models
lattice matched
recess gate
simulation

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation

Access to Document

10.1109/SISPAD.2019.8870407

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Cite this

Shrestha, N. M., Chen, C. H., Tsai, Z. M., Li, Y., Tarng, J. H., & Samukawa, S. (2019). Barrier engineering of lattice matched alingan/ gan heterostructure toward high performance e-mode operation. In F. Driussi (Ed.), Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 [8870407] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2019-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2019.8870407

Barrier engineering of lattice matched alingan/ gan heterostructure toward high performance e-mode operation. / Shrestha, Niraj Man; Chen, Chao Hsuan; Tsai, Zuo Min; Li, Yiming; Tarng, Jenn Hawn; Samukawa, Seiji.

Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019. ed. / Francesco Driussi. Institute of Electrical and Electronics Engineers Inc., 2019. 8870407 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2019-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shrestha, NM, Chen, CH, Tsai, ZM, Li, Y, Tarng, JH & Samukawa, S 2019, Barrier engineering of lattice matched alingan/ gan heterostructure toward high performance e-mode operation. in F Driussi (ed.), Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019., 8870407, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2019-September, Institute of Electrical and Electronics Engineers Inc., 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019, Udine, Italy, 19/9/4. https://doi.org/10.1109/SISPAD.2019.8870407

Shrestha NM, Chen CH, Tsai ZM, Li Y, Tarng JH, Samukawa S. Barrier engineering of lattice matched alingan/ gan heterostructure toward high performance e-mode operation. In Driussi F, editor, Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8870407. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2019.8870407

Shrestha, Niraj Man ; Chen, Chao Hsuan ; Tsai, Zuo Min ; Li, Yiming ; Tarng, Jenn Hawn ; Samukawa, Seiji. / Barrier engineering of lattice matched alingan/ gan heterostructure toward high performance e-mode operation. Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019. editor / Francesco Driussi. Institute of Electrical and Electronics Engineers Inc., 2019. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

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title = "Barrier engineering of lattice matched alingan/ gan heterostructure toward high performance e-mode operation",

abstract = "Electrical characteristics of lattice matched AlInGaN/GaN high electron mobility transistors with different barrier engineering was studied theoretically by solving drift diffusion equation. The results of the study thoroughly disclose the mitigation of induced polarization charge on lowering Al and In content in barrier resulting in a positive shift of threshold voltage with huge deduction on drain current. The newly designed lattice match double A10.54 In0.12 Ga0.34 N/ Al0.18 In0.04 Ga0.78 N barrier recess gate HEMT helps to boost the drain current by reducing the access resistance and enhancing the polarization charge density. The proposed HEMT exalted current density and transconductance by two times with significant shift of threshold voltage in positive axis than that of single barrier structure. Conclusively, the high performance novel double barrier recess gate E-mode HEMT will be key for real and efficient high power switching application.",

keywords = "AlInGaN/GaN HEMT, Double barrier, Drift diffusion, Physical models, lattice matched, recess gate, simulation",

author = "Shrestha, {Niraj Man} and Chen, {Chao Hsuan} and Tsai, {Zuo Min} and Yiming Li and Tarng, {Jenn Hawn} and Seiji Samukawa",

note = "Funding Information: This work was supported in part by the Ministry of Science and Technology, Taiwan, under Grant MOST 106-2221-E-009-149, Grant MOST 106-2622-8-009-013-TM, Grant MOST 107-2622-8-009-011-TM, Grant MOST 107-2221-E-009-094, and Grant MOST 107-3017-F-009-001, in part by the “Center for mmWave Smart Radar Systems and Technologies” under the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education in Taiwan.; 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 ; Conference date: 04-09-2019 Through 06-09-2019",

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N2 - Electrical characteristics of lattice matched AlInGaN/GaN high electron mobility transistors with different barrier engineering was studied theoretically by solving drift diffusion equation. The results of the study thoroughly disclose the mitigation of induced polarization charge on lowering Al and In content in barrier resulting in a positive shift of threshold voltage with huge deduction on drain current. The newly designed lattice match double A10.54 In0.12 Ga0.34 N/ Al0.18 In0.04 Ga0.78 N barrier recess gate HEMT helps to boost the drain current by reducing the access resistance and enhancing the polarization charge density. The proposed HEMT exalted current density and transconductance by two times with significant shift of threshold voltage in positive axis than that of single barrier structure. Conclusively, the high performance novel double barrier recess gate E-mode HEMT will be key for real and efficient high power switching application.

AB - Electrical characteristics of lattice matched AlInGaN/GaN high electron mobility transistors with different barrier engineering was studied theoretically by solving drift diffusion equation. The results of the study thoroughly disclose the mitigation of induced polarization charge on lowering Al and In content in barrier resulting in a positive shift of threshold voltage with huge deduction on drain current. The newly designed lattice match double A10.54 In0.12 Ga0.34 N/ Al0.18 In0.04 Ga0.78 N barrier recess gate HEMT helps to boost the drain current by reducing the access resistance and enhancing the polarization charge density. The proposed HEMT exalted current density and transconductance by two times with significant shift of threshold voltage in positive axis than that of single barrier structure. Conclusively, the high performance novel double barrier recess gate E-mode HEMT will be key for real and efficient high power switching application.

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