Bandwidth-controlled metal-insulator transition in epitaxial PrNiO 3 ultrathin films induced by dimensional crossover

Enju Sakai, Kohei Yoshimatsu, Masatomo Tamamitsu, Koji Horiba, Atsushi Fujimori, Masaharu Oshima, Hiroshi Kumigashira

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The authors have investigated the thickness-dependent physical properties of PrNiO3 ultrathin films epitaxially grown on LaAlO3 substrates. The strained PrNiO3 films exhibit metallic behavior and do not show any indication of temperature-driven metal-insulator transition (MIT) in bulk form, whereas an insulating ground state is realized in a thin limit. In situ photoemission measurements reveal that the observed thickness-dependent MIT is caused by the reduction in bandwidth due to the dimensional control of the films. These results strongly suggest that the MIT in PrNiO3 films can be controlled by changing the dimensionality under epitaxial constraint.

Original languageEnglish
Article number171609
JournalApplied Physics Letters
Issue number17
Publication statusPublished - 2014 Apr 28
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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