Bandwidth-controlled metal-insulator transition in epitaxial PrNiO 3 ultrathin films induced by dimensional crossover

Enju Sakai; Kohei Yoshimatsu; Masatomo Tamamitsu; Koji Horiba; Atsushi Fujimori; Masaharu Oshima; Hiroshi Kumigashira

doi:10.1063/1.4874980

Bandwidth-controlled metal-insulator transition in epitaxial PrNiO ₃ ultrathin films induced by dimensional crossover

Enju Sakai, Kohei Yoshimatsu, Masatomo Tamamitsu, Koji Horiba, Atsushi Fujimori, Masaharu Oshima, Hiroshi Kumigashira

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The authors have investigated the thickness-dependent physical properties of PrNiO₃ ultrathin films epitaxially grown on LaAlO₃ substrates. The strained PrNiO₃ films exhibit metallic behavior and do not show any indication of temperature-driven metal-insulator transition (MIT) in bulk form, whereas an insulating ground state is realized in a thin limit. In situ photoemission measurements reveal that the observed thickness-dependent MIT is caused by the reduction in bandwidth due to the dimensional control of the films. These results strongly suggest that the MIT in PrNiO₃ films can be controlled by changing the dimensionality under epitaxial constraint.

Original language	English
Article number	171609
Journal	Applied Physics Letters
Volume	104
Issue number	17
DOIs	https://doi.org/10.1063/1.4874980
Publication status	Published - 2014 Apr 28
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4874980

Cite this

@article{51ba74aeccb94df5a5758f5d85ef5196,

title = "Bandwidth-controlled metal-insulator transition in epitaxial PrNiO 3 ultrathin films induced by dimensional crossover",

abstract = "The authors have investigated the thickness-dependent physical properties of PrNiO3 ultrathin films epitaxially grown on LaAlO3 substrates. The strained PrNiO3 films exhibit metallic behavior and do not show any indication of temperature-driven metal-insulator transition (MIT) in bulk form, whereas an insulating ground state is realized in a thin limit. In situ photoemission measurements reveal that the observed thickness-dependent MIT is caused by the reduction in bandwidth due to the dimensional control of the films. These results strongly suggest that the MIT in PrNiO3 films can be controlled by changing the dimensionality under epitaxial constraint.",

author = "Enju Sakai and Kohei Yoshimatsu and Masatomo Tamamitsu and Koji Horiba and Atsushi Fujimori and Masaharu Oshima and Hiroshi Kumigashira",

year = "2014",

month = apr,

day = "28",

doi = "10.1063/1.4874980",

language = "English",

volume = "104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - Bandwidth-controlled metal-insulator transition in epitaxial PrNiO 3 ultrathin films induced by dimensional crossover

AU - Sakai, Enju

AU - Yoshimatsu, Kohei

AU - Tamamitsu, Masatomo

AU - Horiba, Koji

AU - Fujimori, Atsushi

AU - Oshima, Masaharu

AU - Kumigashira, Hiroshi

PY - 2014/4/28

Y1 - 2014/4/28

N2 - The authors have investigated the thickness-dependent physical properties of PrNiO3 ultrathin films epitaxially grown on LaAlO3 substrates. The strained PrNiO3 films exhibit metallic behavior and do not show any indication of temperature-driven metal-insulator transition (MIT) in bulk form, whereas an insulating ground state is realized in a thin limit. In situ photoemission measurements reveal that the observed thickness-dependent MIT is caused by the reduction in bandwidth due to the dimensional control of the films. These results strongly suggest that the MIT in PrNiO3 films can be controlled by changing the dimensionality under epitaxial constraint.

AB - The authors have investigated the thickness-dependent physical properties of PrNiO3 ultrathin films epitaxially grown on LaAlO3 substrates. The strained PrNiO3 films exhibit metallic behavior and do not show any indication of temperature-driven metal-insulator transition (MIT) in bulk form, whereas an insulating ground state is realized in a thin limit. In situ photoemission measurements reveal that the observed thickness-dependent MIT is caused by the reduction in bandwidth due to the dimensional control of the films. These results strongly suggest that the MIT in PrNiO3 films can be controlled by changing the dimensionality under epitaxial constraint.

UR - http://www.scopus.com/inward/record.url?scp=84899885117&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899885117&partnerID=8YFLogxK

U2 - 10.1063/1.4874980

DO - 10.1063/1.4874980

M3 - Article

AN - SCOPUS:84899885117

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

M1 - 171609

ER -

Bandwidth-controlled metal-insulator transition in epitaxial PrNiO ₃ ultrathin films induced by dimensional crossover

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this