Bandgap engineering of bilayer graphene for field-effect transistor channels

Eiichi Sano, Taiichi Otsuji

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A potential difference between the two layers of bilayer graphene caused by charge doping and/or an applied gate field can open a bandgap. In this paper, bandgap and charge controllability in graphene field-effect transistors (GFETs) with doped bilayer graphene channels is clarified by solving a one-dimensional Poisson's equation, including electron and hole concentrations derived from a tightbinding Hamiltonian. The calculations show that a high doping concentration of 1013 cm-2 is required to produce a bandgap of 0.3 eV and that this degrades the charge controllability in GFETs.

Original languageEnglish
Pages (from-to)916051-916053
Number of pages3
JournalJapanese journal of applied physics
Volume48
Issue number9 Part 1
DOIs
Publication statusPublished - 2009 Dec 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Bandgap engineering of bilayer graphene for field-effect transistor channels'. Together they form a unique fingerprint.

  • Cite this